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| 1 | Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO显示文摘2X (FeNi/CoZnO )/ZnO/(CoZnO/Co ) X2 纺纱注射设备被劈啪作响和 photo-lithography.In 准备设备,二合成的磁性的层 2X (FeNi/CoZnO ) 并且(CoZnO/Co ) 有不同 coercivities 的 X2 被用来制作基于 ZnO 的半导体旋转阀门。因为 CoZnO 铁磁性的半导体层直接摸了 ZnO 空间层,从进 ZnO 的 CoZnO 的重要旋转注射被测量纺纱注射设备的磁致电阻观察。磁致电阻在房间温度在 90 K 与增加温度线性地归结,从 1.12% 为 0.35% 。 | Gang JI Shishen YAN Yanxue CHEN Qiang CAO Wei XIA Yihua LIU | 2008 | Journal of Materials Science & Technology2008，24，3： | 1 |
| 2 | Giant magnetoimpedance and domain structure in FeCuNbSiB films and sandwiched films 显示文摘 | Xiao Shuqin Liu Yihua Yan Shishen | 2000 | Phys Rev B2000，61，8： | 1 |
| 3 | Giant magnetoresistance:history,development and beyond显示文摘With the discovery of giant magnetoresistance(GMR),research effort has been made to exploiting the influence of spins on the mobility of electrons in ferromagnetic materials and/or artificial structures,which has lead to the idea of spintronics.A brief introduction is given to GMR effects from scientific background to experimental observations and theoretical models.In addition,the mechanisms of various magnetoresistance beyond the GMR are reviewed,for instance,tunnelling magnetoresistance,colossal magnetoresistance,and magnetoresistance in ferromagnetic semiconductors,nanowires,organic spintronics and non-magnetic systems. | TIAN YuFeng YAN ShiShen | 2013 | Science China(Physics,Mechanics & Astronomy)2013，56，1： | 1 |
| 4 | Transformation of electrical transport from variable range hopping to hard gap resistance in Znl-, FexOl_v magnetic semiconductor films 显示文摘 | TIAN Yufeng YAN Shishen ZHANG Yunpeng | 2006 | Journal of Applied Physics2006，100，10： | 1 |
| 5 | Duplex Interpenetrating-Phase FeNiZn and FeNi_(3)Heterostructure with Low-Gibbs Free Energy Interface Coupling for Highly Efficient Overall Water Splitting显示文摘The sluggish kinetics of both hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)generate the large overpotential in water electrolysis and thus high-cost hydrogen production.Here,multidimensional nanoporous interpenetrating-phase FeNiZn alloy and FeNi_(3)intermetallic heterostructure is in situ constructed on NiFe foam(FeNiZn/FeNi_(3)@NiFe)by dealloying protocol.Coupling with the eminent synergism among specific constituents and the highly efficient mass transport from integrated porous backbone,FeNiZn/FeNi_(3)@NiFe depicts exceptional bifunctional activities for water splitting with extremely low overpotentials toward OER and HER(η_(1000)=367/245 mV)as well as the robust durability during the 400 h testing in alkaline solution.The as-built water electrolyzer with FeNiZn/FeNi_(3)@NiFe as both anode and cathode exhibits record-high performances for sustainable hydrogen output in terms of much lower cell voltage of 1.759 and 1.919 V to deliver the current density of 500 and 1000 mA cm^(-2)as well long working lives.Density functional theory calculations disclose that the interface interaction between FeNiZn alloy and FeNi_(3)intermetallic generates the modulated electron structure state and optimized intermediate chemisorption,thus diminishing the energy barriers for hydrogen production in water splitting.With the merits of fine performances,scalable fabrication,and low cost,FeNiZn/FeNi_(3)@NiFe holds prospective application potential as the bifunctional electrocatalyst for water splitting. | Qiuxia Zhou Caixia Xu Jiagang Hou Wenqing Ma Tianzhen Jian Shishen Yan Hong Liu | 2023 | Nano-Micro Letters2023，15，7： | 1 |
| 6 | High-temperature ferromagnetic metallic phase in LaMnO_(3)/Sr_(3)Al_(2)O_(6)heterostructure显示文摘To achieve a flexible single-crystal multifunctional membrane,the freestanding process of a rigid epitaxial transition metal oxide thin film via a buffered water-dissolution sacrificial layer has attracted reasonable attentions.Owing to the difference in chemical potential,specific element affinity,and lattice constant between the target membrane and the sacrificial layer,the freestanding process may cause an indelible change of physics property once the target thin film is sensitive to the above factors.Here,the heterostructures composed of the generally adopted sacrificial layer Sr_(3)Al_(2)O_(6)(SAO)and LaMnO_(3)(LMO)have been systematically investigated.The electrical and magnetic properties of LMO show extreme sensitivity to the thickness of SAO(tSAO).Then we have also found that LMO/SAO heterostructures can exhibit the coexistence of two ferromagnetic phases,the significantly enhanced Curie temperature~342 K,and the large magnetoresistance-23.3%at 300 K,which is similar to the optimal-doped manganite such as La_(2/3)Sr_(1/3)MnO_(3).X-ray diffraction results show that continuously tunable strain from out-of-plane tension to relaxation and then to compression can be generated by adjusting tSAO.This strain can stabilize the migrated oxygen from LMO to SAO,which is induced by the large oxygen affinity difference between Bsite Mn and Al.It is believed that these unexpected electrical/magnetic phenomena are originated from the combined effects of interfacial element diffusion and strain.Our study provides a strategy for designing new magnetic phases,and a reference for the fundamental understanding of strongly correlated transition metal oxide systems in the freestanding process. | Di Wang Bin He Jinrui Guo Qixiang Wang Chaoqun Shi Yue Han Hong Fang Jie Wang Nana Zhang Peng Zhang Yanan Chen Changwen Zhang Weiming Lü Shishen Yan | 2022 | Journal of Materials Science & Technology2022，，24： | 0 |
| 7 | Magnetism and Its Dependence on Annealing Temperature for Sputtered Co/Cu Multilayers显示文摘Magnetism and its dependence on annealing temperature for r.f. sputtered Co/Cu multilayers have been investigated. It was found that the easy magnetization axes of the films are paralIel to the substrate and the magnetic properties of both as-sputtered and annealed multilayers are isotropic in the film plane. The coercive field Hc is 4.8 kA/m and the ratio of remanence-tosaturation magnetization Mi/M is about 0.73 for as-sputtered samples. Both Hc and Mr/Ms increase with increasing annealing temperatures, especially when annealing temperatures are higher than 400℃. These experimental results can be interpreted using the ferromagnetic exchange coupling and the pinning theory of the | Gao, Ruwei Liu, Yihua Yan, Shishen Zhang, Deheng Zhang, Lin | 1998 | Journal of Materials Science & Technology1998，14，2： | 0 |
| 8 | Mechanistic understanding of the charge storage processes in FeF_(2) aggregates assembled with cylindrical nanoparticles as a cathode material for lithium-ion batteries by in situ magnetometry显示文摘Transition metal fluorides(TMFs)cathode materials have shown extraordinary promises for electrochemical energy storage,but the understanding of their electrochemical reaction mechanisms is still a matter of debate due to the complicated and continuous changing in the battery internal environment.Here,we design a novel iron fluoride(FeF_(2))aggregate assembled with cylindrical nanoparticles as cathode material to build FeF_(2) lithium-ion batteries(LIBs)and employ advanced in situ magnetometry to detect their intrinsic electronic structure during cycling in real time.The results show that FeF_(2) cannot be involved in complete conversion reactions when the FeF_(2) LIBs operate between the conventional voltage range of 1.0–4.0 V,and that the corresponding conversion ratio of FeF_(2) can be further estimated.Importantly,we first demonstrate that the spin-polarized surface capacitance exists in the FeF_(2) cathode by monitoring the magnetic responses over various voltage ranges.The research presents an original and insightful method to examine the conversion mechanism of TMFs and significantly provides an important reference for the future artificial design of energy systems based on spinpolarized surface capacitance. | Zhengqiang Hu Fengling Zhang Huanyu Liang Hao Zhang Huaizhi Wang Tiansheng Wang Renbin Liu Jie Liu Yadong Li Xiaotong Dong Lianyu Bao Zhuan Liang Yaqun Wang Shishen Yan Qiang Li Hongsen Li | 2022 | Carbon Energy2022，4，6： | 0 |
| 9 | Janus VXY monolayers with tunable large Berry curvature显示文摘The Rashba effect and valley polarization provide a novel paradigm in quantum information technology. However,practical materials are scarce. Here, we found a new class of Janus monolayers VXY(X = Cl, Br, I;Y = Se, Te) with excellent valley polarization effect. In particular, Janus VBrSe shows Zeeman type spin splitting of 14 meV, large Berry curvature of 182.73 bohr2,and, at the same time, a large Rashba parameter of 176.89 meV·?. We use the k·p theory to analyze the relationship between the lattice constant and the curvature of the Berry. The Berry curvature can be adjusted by changing the lattice parameter,which will greatly improve the transverse velocities of carriers and promote the efficiency of the valley Hall device. By applying biaxial strain onto VBrSe, we can see that there is a correlation between Berry curvature and lattice constant, which further validates the above theory. All these results provide tantalizing opportunities for efficient spintronics and valleytronics. | Wenrong Liu Xinyang Li Changwen Zhang Shishen Yan | 2022 | Journal of Semiconductors2022，43，4： | 0 |
| 10 | Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling显示文摘With the rapid development of emerging concepts,such as the Internet of things and big data,the use of various magnetoresistance(MR)sensors,especially tunneling MR(TMR)in magnetic tunnel junctions(MTJs),for information perception is considered the critical first step.A typical topic in this field is the construction of a Wheatstone bridge structure to restrain the temperature drift and amplify the magnetic response signal. | Weibin CHEN Shaohua YAN Zhiqiang CAO Shiyang LU Xiaonan ZHAO Runrun HAO Zitong ZHOU Zhi LI Kun ZHANG Shishen YAN Qunwen LENG | 2023 | Science China(Information Sciences)2023，66，4： | 0 |
| 11 | The predicaments and expectations in development of magnetic semiconductors显示文摘Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room temperature magnetic semiconductors with strong and controllable s, p-d exchange interaction. With this s, p-d exchange interaction, one can utilize the spin degree of freedom to design applicable spintronics devices with very attractive functions that are not available in conventional semiconductors. Here, we first review the progress in understanding of this particular material and the dilemma to prepare a room temperature magnetic semiconductor. Then we discuss recent experimental progresses to pursue strong s, p-d interaction to realize room temperature magnetic semiconductors, which are achieved by introducing a very high concentration of magnetic atoms by means of low-temperature nonequilibrium growth. | Qiang Cao Shishen Yan | 2019 | Journal of Semiconductors2019，40，8： | 0 |
| 12 | Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions显示文摘[FeNi(3 nm)/Zn1-xCoxO(3 nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2(d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography.The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers.The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization αsc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons.αsc was reduced from 11.7%(and 10.5%) at 90 K to 7.31%(and 5.93%) at room temperature for d=3(and d=10).And η was reduced from 39.5%(and 35.5%) at 90 K to 24.7%(and 20.0%) at room temperature for d=3(and d=10). | Gang JI Ze ZHANG Yanxue CHEN Shishen YAN Yihua LIU Liangmo MEI | 2009 | Acta Metallurgica Sinica(English Letters)2009，22，2： | 0 |
| 13 | Two-dimensional rectangular bismuth bilayer:A novel dual topological insulator显示文摘Dual topological insulator(DTI),which simultaneously hosts topological insulator(TI)and topological crystalline insulator(TCI)phases,has attracted extensive attention since it has a better robustness of topological nature and broad application prospects in spintronics.However,the realization of DTI phase in two-dimensional(2D)system is extremely scarce.By first-principles calculations,we predict that the 2D rectangular bismuth(R–Bi)bilayer is a novel DTI,featured by topological invariant=1,mirror Chern number C_(M)=–1,and metallic edge states within the bulk band gap.More interestingly,the TCI phase in bilayer is protected by horizontal glide mirror symmetries,rather than the usual mirror symmetry.The bulk band gap can be effectively tuned by vertical electric field and strain.Besides,the electric field can trigger the transition between TI and metallic phases for the bilayer,accompanied by the annihilation of TCI phase.On this basis,a topological field effect transistor is proposed,which can rapidly manipulate spin and charge carriers via electric field.The KBr(110)surface is demonstrated as an ideal substrate for the deposition of bilayer.These findings provide not only a new strategy for exploiting 2D DTI,but also a promising candidate for spintronic applications. | Shengshi Li Weixiao Ji Jianping Zhang Yaping Wang Changwen Zhang Shishen Yan | 2023 | Frontiers of physics2023，18，4： | 0 |
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