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| 1 | An overview of resistive random access memory devices显示文摘With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given. | LI YingTao LONG ShiBing LIU Qi LU HangBing LIU Su LIU Ming | 2011 | Chinese Science Bulletin2011，56，28： | 9 |
| 2 | Improving the electrical performance of resistive switching memory using doping technology显示文摘In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. | WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming | 2012 | Chinese Science Bulletin2012，57，11： | 6 |
| 3 | Overexpression of SlOFP20 affects floral organ and pollen development显示文摘The OVATE gene was initially identified in tomato and serves as a key regulator of fruit shape.There are 31 OFP members in the tomato genome.However,their roles in tomato growth and reproductive development are largely unknown.Here,we cloned the OFP transcription factor SlOFP20.Tomato plants overexpressing SlOFP20 displayed several phenotypic defects,including an altered floral architecture and fruit shape and reduced male fertility.SlOFP20 overexpression altered the expression levels of some brassinosteroid(BR)-associated genes,implying that SlOFP20 may play a negative role in the BR response,similar to its ortholog OsOFP19 in rice.Moreover,the transcript accumulation of gibberellin(GA)-related genes was significantly affected in the transgenic lines.SlOFP20 may play an important role in the crosstalk between BR and GA.The pollen germination assay suggested that the pollen germination rate of SlOFP20-OE plants was distinctly lower than that of WT plants.In addition,the tomato pollen-associated genes SlCRK1,SlPMEI,LePRK3,SlPRALF,and LAT52 were all suppressed in the transgenic lines.Our data imply that SlOFP20 may affect floral organ and pollen development by modulating BR and GA signaling in tomato. | Shengen Zhou Zongli Hu Fenfen Li Shibing Tian Zhiguo Zhu Anzhou Li Guoping Chen | 2019 | Horticulture Research2019，6，1： | 4 |
| 4 | Dynamic edge-based biomarker non-invasively predicts hepatocellular carcinoma with hepatitis B virus infection for individual patients based on blood testing显示文摘Hepatitis B virus (HBV)-induced hepatocellular carcinoma (HCC) is a major cause of cancer-related deaths in Asia and Africa. Developing effective and non-invasive biomarkers of HCC for individual patients remains an urgent task for early diagnosis and convenient monitoring. Analyzing the transcriptomic profiles of peripheral blood mononuclear cells from both healthy donors and patients with chronic HBV infection in different states (i.e. HBV carrier, chronic hepatitis B, cirrhosis, and HCC), we identified a set of 19 candidate genes according to our algorithm of dynamic network biomarkers. These genes can both characterize different stages during HCC progression and identify cirrhosis as the critical transition stage before carcinogenesis. The interaction effects (i.e. coexpressions) of candidate genes were used to build an accurate prediction model: the so-called edge-based biomarker. Considering the convenience and robustness of biomarkers in clinical applications, we performed functional analysis, validated candidate genes in other independent samples of our collected cohort, and finally selected COL5A1, HLA-DQB1, MMP2, and CDK4 to build edge panel as prediction models. We demonstrated that the edge panel had great performance in both diagnosis and prognosis in terms of precision and specificity for HCC, especially for patients with alpha-fetoprotein-negative HCC. Our study not only provides a novel edge-based biomarker for non-invasive and effective diagnosis of HBV-associated HCC to each individual patient but also introduces a new way to integrate the interaction terms of individual molecules for clinical diagnosis and prognosis from the network and dynamics perspectives. | Yiyu Lu Zhaoyuan Fang Meiyi Li Chen Qian Tao Zeng Lina Lu Qilong Chen Hui Zhang Qianmei Zhou Yan Sun Xuefeng Xue Yiyang Hu Luonan Chen Shibing Su | 2019 | Journal of Molecular Cell Biology2019，11，8： | 3 |
| 5 | Novel spectrum sensing and access in cognitive radio networks显示文摘The throughput, delay and collision probabilitybetween tim primary users (PUs) and secondaryusers (SUs) have been considered as the inain per-formance measures in cognitive radio (CR) net-works [1]. The longer the sensing period, the moreaccurate the spectrum sensing. But a longer sens-ing period will result in lower system throughput. | Shibing ZHANG Yingdong HU Li ZHANG Zhihua BAO | 2018 | Science China(Information Sciences)2018，61，8： | 2 |
| 6 | Recent progress and strategies toward high performance zinc-organic batteries显示文摘Energy sustainable development has stimulated the pursuit of an eco-friendly energy storage system.Carbon peak and neutrality targets oriented energy storage development will guide the way of further studies on batteries system.However,conventional batteries system(lead-acid batteries,lithium-ion batteries)based on ungreen transition metal oxide,flammable electrolytes or hazardous metals cannot keep pace with the development of society sooner or later.Thus,vast explorations on the advanced rechargeable battery systems were conducted.Compared with other battery systems,zinc ion battery systems with inherent safety,low cost were widely investigated.Especially,the zinc organic batteries based on the eco-efficiency organic cathodes were promising alternative advanced batteries for future energy storage systems.Therefore,various organics and different electrochemistry mechanisms were explored in the zinc batteries system.Herein,a timely review on elaborate analysis about functional groups,fundamentals,progress accompanied by the discussion on the four core issues:voltage,capacity,rate performance,cycle life was presented.Specifically,aiming at these issues,three levels of solution strategies:materials design concepts,morphology structure optimization and electrolyte environment were summarized and proposed for the development and innovation of zinc organic batteries. | Shibing Zheng Qiaoran Wang Yunpeng Hou Lin Li Zhanliang Tao | 2021 | Journal of Energy Chemistry2021，30，12： | 2 |
| 7 | On proactive eavesdropping using anti-relay-selection jamming in multi-relay communication systems显示文摘This paper considers a multi-relay legitimate surveillance system, where a suspicious link may transmit illegal information with the help of relays and a legitimate monitor aims at intercepting the information. We assume that the relay selection method is adopted by the suspicious link to improve the efficiency of the information transmission. We propose anti-relay-selection(ARS) jamming strategies for two different information transmission scenarios, namely the event-based information and content-based information. Beamforming vector of jamming is optimized and the iterative algorithms are used to improve the jamming efficiency. We demonstrate the effectiveness and the superiority of the ARS jamming strategies through numerical results and simulations. | Yingdong HU Ruifeng GAO Ye LI Shibing ZHANG | 2019 | Science China(Information Sciences)2019，62，4： | 2 |
| 8 | Approaches for improving the performance of filament-type resistive switching memory显示文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. | LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming | 2011 | Chinese Science Bulletin2011，56，4： | 2 |
| 9 | Fabrication of Cu2S on Cu film electrode and its application in lithium ion bat- tery显示文摘 | Shibing Ni Tao Li Xuelin Yang | 2012 | Thin Solid Fihns2012，520，21： | 1 |
| 10 | Investigation of LRS dependence on the retention of HRS in CBRAM显示文摘 | Xiaoxin Xu Hangbing Lv Hongtao Liu Qing Luo Tiancheng Gong Ming Wang Guoming Wang Meiyun Zhang Yang Li Qi Liu Shibing Long Ming Liu | 2015 | Nanoscale Research Letters2015，，： | 1 |
| 11 | 显示文摘 | Tian Shibing Li Lin Sun Wangning | 2012 | Scientif- ic Reports2012，2，511： | 1 |
| 12 | An overview of the switching parameter variation of RRAM显示文摘Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed. | Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu | 2014 | Chinese Science Bulletin2014，59，36： | 1 |
| 13 | A Survey on Heliumspeech Communications in Saturation Diving显示文摘With the development of society and the progress of technology,more and more ocean activities are carried out.It results in booming of deep-sea diving.The use of helium-oxygen mixture(as a kind of breathing gas)solves the physiological problems of divers in saturated diving,but it brings about the Heliumspeech voice communication problem,the drop of speech intelligibility.There is no doubt that the effective speech communication must be provided for supporting the life and work of divers in deep-sea.This paper describes the mechanism of forming heliumspeech,discusses the effects of pressure and helium environment on the speech spectrum,compares the pros and cons of the time-domain and frequency-domain unscrambling techniques,shows the challenges in heliumspeech communications.Finally,it briefly introduces the deep learning,and points out that deep learning/machine learning may be a perfectly unscrambling technique. | Shibing Zhang Lili Guo Hongjun Li Zhihua Bao Xiaoge Zhang Yonghong Chen | 2020 | China Communications2020，17，6： | 1 |
| 14 | Self‑Generated Buried Submicrocavities for High‑Performance Near‑Infrared Perovskite Light‑Emitting Diode显示文摘ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)to trigger the Ostwald ripening for the downward recrystallization of perovskite,resulting in spontaneous formation of buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2%for near-infrared light.Therefore,PeLED yields peak external quantum efficiency(EQE)increasing from 17.3%at current density of 114 mA cm^(−2)to 25.5%at current density of 109 mA cm^(−2)and a radiance increasing from 109 to 487 W sr^(−1)m^(−2)with low rolling-off.The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr^(−1)m^(−2).Besides,downward recrystallization process slightly reduces the trap density from 8.90×10^(15)to 7.27×10^(15)cm^(−3).This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs. | Jiong Li Chenghao Duan Qianpeng Zhang Chang Chen Qiaoyun Wen Minchao Qin Christopher C.S.Chan Shibing Zou Jianwu Wei Zuo Xiao Chuantian Zuo Xinhui Lu Kam Sing Wong Zhiyong Fan Keyou Yan | 2023 | Nano-Micro Letters2023，15，8： | 1 |
| 15 | Increasing the discriminatory power of DEA in the presence of the undesirable outputs and large dimensionality of data sets with PCA 显示文摘 | Liang Liang Li Yongjun Li Shibing | 2009 | Expert Systems with Applica- tions2009，36，3： | 1 |
| 16 | Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array显示文摘闩数组为完成二终端的功能的设备的高密度的集成提供一条划算的途径。然而,溜的当前的问题,能导致读的失败,是在闩数组的严重挑战。从 unselected 房间禁止溜的水流,单个选择设备的集成是必要的。在这个工作,我们报导展出在氧化物调节缺点的集中形成的 trapezoidal 乐队结构的一个新奇的道 x -based 选购者。突出的特征象高当前的密度那样(1 麻省穩 ? 楤瑳楲畢楴湯 ? 湩楳敤琠敨瘠物獵戭獡摥丠獐漠 ? 楳業湡瘠物獵? | Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu | 2017 | Nano Research2017，10，10： | 1 |
| 17 | Progress in rectifying-based RRAM passive crossbar array显示文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed. | ZHANG KangWei LONG ShiBing LIU Qi LUE HangBing LI YingTao WANG Yan LIAN WenTai WANG Ming ZHANG Sen LIU Ming | 2011 | Science China(Technological Sciences)2011，54，4： | 1 |
| 18 | Fully Printed High‑Performance n‑Type Metal Oxide Thin‑Film Transistors Utilizing Coffee‑Ring Effect显示文摘Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications. | Kun Liang Dingwei Li Huihui Ren Momo Zhao Hong Wang Mengfan Ding Guangwei Xu Xiaolong Zhao Shibing Long Siyuan Zhu Pei Sheng Wenbin Li Xiao Lin Bowen Zhu | 2021 | Nano-Micro Letters2021，13，11： | 1 |
| 19 | Concise Strategies to Enhance the High-Rate Performance of Li_(3)VO_(4) Anodes:Cl Doping,Carbon Coating,and Spherical Architecture Design显示文摘The safe operating voltage and low volume variation of Li_(3)VO_(4)(LVO)make it an ideal anode material for lithium(Li)-ion batteries.However,the insufficient understanding of the inner storage mechanism hinders the design of LVO-based electrodes.Herein,we investigate,for the first time,the Li-ion storage activity in LVO via Cl doping.Moreover,N-doped C coating was simultaneously achieved in the Cl doping process,resulting in synergistically improved reaction kinetics.As a result,the as-prepared Cl-doped Li_(3)VO_(4) coated with N-doped C(Cl-LVO@NC)electrodes deliver a discharge capacity of 884.1 mAh/g after 200 cycles at 0.2 A/g,which is the highest among all of the LVO-based electrodes.The Cl-LVO@NC electrodes also exhibit high-capacity retention of 331.1 mAh/g at 8.0 A/g and full capacity recovery after 5 periods of rate testing over 400 cycles.After 5000 cycles at 4.0 A/g,the discharge capacity can be maintained at 423.2 mAh/g,which is superior to most LVO-based electrodes.The Li-ion storage activity in LVO via Cl doping and significant improvement in the high-rate Li-ion storage reported in this work can be used as references for the design of advanced LVO-based electrodes for high-power applications. | Zongping Zhang Jie Xu Dongmei Zhang Huijuan Ma Tao Li Ting Xiao Cunyuan Pei Shibing Ni | 2023 | Transactions of Tianjin University2023，29，2： | 0 |
| 20 | Tunnel-Fitted Matching between the Wireless Sensor and Actor Networks and the IPv6 Based on Packet Control显示文摘 | Sheng Yang Shibing Zhu Hui Zhou Yueping Tang Hongjun Li Zhiping Wen | 2010 | 通讯和计算机(中英文版)2010，7，1： | 0 |
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