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| 1 | The Genome of Dendrobium officinale Illuminates the Biology of the Important Traditional Chinese Orchid Herb显示文摘 | Liang Yan Xiao Wang Hui Liu Yang Tian Jinmin Lian Ruijuan Yang ShumeiHao Xuanjun Wang Shengchao Yang Qiye Li Shuai Qi Ling Kui Moses Okpekum Xiao Ma Jiajin Zhang Zhaoli Ding Guojie Zhang Wen Wang Yang Dong Jun Sheng | 2015 | Molecular Plant2015，8，6： | 64 |
| 2 | Microtubule-associated deacetylase HDAC6 promotes angiogenesis by regulating cell migration in an EB1-dependent manner显示文摘Angiogenesis,a process by which the preexisting blood vasculature gives rise to new capillary vessels,is associated with a variety of physiologic and pathologic conditions.However,the molecular mechanism underlying this important process remains poorly understood.Here we show that histone deacetylase 6(HDAC6),a microtubule-associated enzyme critical for cell motility,contributes to angiogenesis by regulating the polarization and migration of vascular endothelial cells.Inhibition of HDAC6 activity impairs the formation of new blood vessels in chick embryos and in angioreactors implanted in mice.The requirement for HDAC6 in angiogenesis is corroborated in vitro by analysis of endothelial tube formation and capillary sprouting.Our data further show that HDAC6 stimulates membrane ruffling at the leading edge to promote cell polarization.In addition,microtubule end binding protein 1(EB1)is important for HDAC6 to exert its activity towards the migration of endothelial cells and generation of capillary-like structures.These results thus identify HDAC6 as a novel player in the angiogenic process and offer novel insights into the molecular mechanism governing endothelial cell migration and angiogenesis. | Dengwen Li Songbo Xie Yuan Ren Lihong Huo Jinmin Gao Dandan Cui Min Liu Jun Zhou | 2011 | Protein & Cell2011，2，2： | 13 |
| 3 | Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array显示文摘The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes(DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present>2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improved light extraction efficiency. A three-dimensional finite-different time-domain simulation is performed to analyze further in detail the TE-and TM-polarized photon extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters. | LIANG ZHANG YANAN GUO JIANCHANG YAN QINGQING WU YI LU ZHUOHUI WU WEN GU XUECHENG WEI JUNXI WANG JINMIN LI | 2019 | Photonics Research2019，7，9： | 8 |
| 4 | Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates显示文摘AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 ?/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at Vgs=0.5 V and Vds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (?T ) and a 28-GHz maximum oscillation frequency (?max) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz. | WANG Xiaoliang WANG Cuimei HU Guoxin WANG Junxi RAN Junxue FANG Cebao LI Jianping ZENG Yiping LI Jinmin LIU Xinyu LIU Jian QIAN He | 2005 | Science in China(Series F)2005，48，6： | 7 |
| 5 | Growth of ZnO Single Crystal by Chemical Vapor Transport Method显示文摘ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique. | Zhao Youwen Dong Zhiyuan Wei Xuecheng Duan Manlong Li Jinmin | 2006 | Journal of Rare Earths2006，24，z1： | 7 |
| 6 | Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications显示文摘常规玻璃上的高质量的 graphene 的快、一致的生长为 graphene 玻璃的实际应用程序是很重要的。我们此处为 graphene 玻璃的高效率的制造报导一条范围流动化学药品蒸汽免职(CVD ) 途径。我们的途径的特色是 2-4 m 的制造在玻璃底层上面的宽差距,与很多的跌倒块;这差距被发现显著地增加在对方之间并且与玻璃表面的碳先锋和反应碎片的碰撞概率。作为结果, graphene 玻璃的生长率显著地增加了,和在象与那些相比的生长质量和在常规煤气的流动 CVD 技术的一致性的改进。这些高质量的 graphene 眼镜与以前报导的那些相比以许多更高的 defogging 速度和更高的稳定性展出了优秀 defogging 表演。graphene 蓝宝石玻璃被发现是为种制服和极端光滑的铝氮化物的理想的底层没有缓冲区层的乏味的免职前的薄电影。介绍范围流动 CVD 途径为 graphene 玻璃的大量生产提供一条简单、便宜的线路,它被相信支持各种各样的 graphene 眼镜的实际应用。 | Zhaolong Chen Baolu Guan Xu-dong Chen Qing Zeng Li Lin Ruoyu Wang Manish Kr. Priydarshi Jingyu Sun Zhepeng Zhang Tongbo Wei Jinmin LI Yanfeng Zhang Yingying Zhang Zhongfan Liu | 2016 | Nano Research2016，9，10： | 5 |
| 7 | Response of Regeneration Diversity of Carex Lasiocarpa Community to Different Water Levels in Sanjiang Plain,China显示文摘The species diversity at the regeneration stage, inflenced by different water levels, is important for community composition in the later growing season.Regeneration diversity of Carex lasiocarpa community under different water levels was studied at two stages, recruitment and adult, in the Sanjiang Plain, Heilongjiang Province, China.The results showed that, at the two growing stages, important value of C.lasiocarpa population and species richness of the community decreased with the increasing water level, while the Simpson and Shannon-Wiener diversity indexes and Pielou evenness index increased.Under different water levels, community diversities were higher at the recruitment stage, while population important values of C.lasiocarpa were higher at the adult stage.Indexes in vegetation evaluation must be chosen prudentially for successful restoration and effective management of wetlands, and especially for wetland restoration, the optimal time should be selected according to the restoration objectives and costs. | WANG Li SONG Changchun HU Jinmin YANG Tao | 2010 | Chinese Geographical Science2010，20，1： | 5 |
| 8 | Isolation and phylogenetic study of Rift Valley fever virus from the first imported case to China显示文摘Dear Editor,Rift Valley fever(RVF)is an anthropozoonosis caused by Rift Valley fever virus(RVFV).RVFV belongs to the Phlebovirus genus in the family Bunyaviridae,which is circulating among ruminants.Human infection with RVFV is generally asymptomatic,however,minority of patients develop severe RVF diseases like encephalitis | Yongxia Shi Kui Zheng Xiaobo Li Liqiang Li Shufen Li Jinmin Ma Jun Dai Jingkai Ji Shuai Yuan Haorong Lu Jiandong Li Fangfang Sun Xun Xu Jicheng Huang | 2017 | Virologica Sinica2017，32，3： | 4 |
| 9 | Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth显示文摘To achieve high quality lighting and visible light communication(VLC)simultaneously,Ga N based white light emitting diodes(WLEDs)oriented for lighting in VLC has attracted great interest.However,the overall bandwidth of conventional phosphor converted WLEDs is limited by the long lifetime of phosphor,the slow Stokes transfer process,the resistance-capacitance(RC)time delay,and the quantum-confined Stark effect(QCSE).Here by adopting a self-assembled In Ga N quantum dots(QDs)structure,we have fabricated phosphor-free single chip WLEDs with tunable correlated color temperature(CCT,from 1600 K to 6000 K),a broadband spectrum,a moderate color rendering index(CRI)of 75,and a significantly improved modulation bandwidth(maximum of150 MHz)at a low current density of 72 A∕cm^2.The broadband spectrum and high modulation bandwidth are ascribed to the capture of carriers by different localized states of In Ga N QDs with alleviative QCSE as compared to the traditional In Ga N/Ga N quantum well(QW)structures.We believe the approach reported in this work will find its potential application in Ga N WLEDs and advance the development of semiconductor lighting-communication integration. | Rongqiao Wan Xiang Gao Liancheng Wang Shuo Zhang Xiongbin Chen Zhiqiang Liu Xiaoyan Yi Junxi Wang Junhui Li Wenhui Zhu Jinmin Li | 2020 | Photonics Research2020，8，7： | 3 |
| 10 | LiF@SiO2 nanocapsules for controlled lithium release and osteoarthritis treatment显示文摘 | Trever Todd Zhenhui Lu Jinmin Zhao Benjamin Cline Weizhong Zhang Hongmin Chen Anil Kumar Wen Jiang Franklin West Samuel Franklin Li Zheng Jin Xie | 2018 | Nano Research2018，11，10： | 3 |
| 11 | Study of the morphology evolution of AlN grown on nanopatterned sapphire substrate显示文摘This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor deposition.The substrate with concave cones was fabricated by nano-imprint lithography and wet etching.Two samples with different epitaxy procedures were fabricated,manifesting as two-dimensional growth mode and three-dimensional growth mode,respectively.The results showed that growth temperature deeply influenced the growth modes and thus played a critical role in the coalescence of AlN.At a relatively high temperature,the AlN epilayer was progressively coalescence and the growth mode was two-dimensional.In this case,we found that the inclined semi-polar facets arising in the process of coalescence were{112^-1}type.But when decreasing the temperature,the{112^-2}semi-polar facets arose,leading to inverse pyramid morphology and obtaining the three-dimensional growth mode.The 3 D inverse pyramid AlN structure could be used for realizing 3 D semi-polar UV-LED or facet-controlled epitaxial lateral overgrowth of AlN. | Zhuohui Wu Jianchang Yan Yanan Guo Liang Zhang Yi Lu Xuecheng Wei Junxi Wang Jinmin Li | 2019 | Journal of Semiconductors2019，40，12： | 2 |
| 12 | MOCVD-grown high-mobility Al 0.3 Ga 0.7 N/AlN/GaN HEMT structure on sapphire substrate显示文摘 | Xiaoliang Wang Cuimei Wang Guoxin Hu Hongling Xiao Cebao Fang Junxi Wang Junxue Ran Jianping Li Jinmin Li Zhanguo Wang | 2006 | Journal of Crystal Growth2006，，： | 2 |
| 13 | The association of interleukin-16 gene polymorphisms with IL-16 serum levels and risk of nasopharyngeal carcinoma in a Chinese population显示文摘 | Xue Qin Qiliu Peng Xiaoxia Lao Zhiping Chen Yu Lu Xianjun Lao Cuiju Mo Jingzhe Sui Junrong Wu Limin Zhai Shi Yang Shan Li Jinmin Zhao | 2014 | Tumor Biology2014，，3： | 2 |
| 14 | Fluid evolution and hydrocarbon accumulation model of ultra-deep gas reservoirs in Permian Qixia Formation of northwest Sichuan Basin,SW China显示文摘The fluid evolution and reservoir formation model of the ultra-deep gas reservoirs in the Permian Qixia Formation of the northwestern Sichuan Basin are investigated by using thin section,cathodoluminescence,inclusion temperature and U-Pb isotopic dating,combined with gas source identification plates and reservoir formation evolution profiles established based on burial history,thermal history,reservoir formation history and diagenetic evolution sequence.The fluid evolution of the marine ultra-deep gas reservoirs in the Qixia Formation has undergone two stages of dolomitization and one phase of hydrothermal action,two stages of oil and gas charging and two stages of associated burial dissolution.The diagenetic fluids include ancient seawater,atmospheric freshwater,deep hydrothermal fluid and hydrocarbon fluids.The two stages of hydrocarbon charging happened in the Late Triassic and Late Jurassic–Early Cretaceous respectively,and the Middle to Late Cretaceous is the period when the crude oil cracked massively into gas.The gas reservoirs in deep marine Permian strata of northwest Sichuan feature multiple source rocks,composite transportation,differential accumulation and late finalization.The natural gas in the Permian is mainly cracked gas from Permian marine mixed hydrocarbon source rocks,with cracked gas from crude oil in the deeper Sinian strata in local parts.The scale development of paleo-hydrocarbon reservoirs and the stable and good preservation conditions are the keys to the forming large-scale gas reservoirs. | LI Jianzhong BAI Bin BAI Ying LU Xuesong ZHANG Benjian QIN Shengfei SONG Jinmin JIANG Qingchun HUANG Shipeng | 2022 | Petroleum Exploration and Development2022，49，4： | 2 |
| 15 | Implementation of slow and smooth etching of GaN by inductively coupled plasma显示文摘Slow and smooth etching of gallium nitride(GaN) by BCl_3/Cl_2-based inductively coupled plasma(ICP)is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency(RF) power, the flow rate of Cl_2 and BCl_3, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl_3 flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively. | Xilin Li Ping Ma Xiaoli Ji Tongbo Wei Xiaoyu Tan Junxi Wang Jinmin Li | 2018 | Journal of Semiconductors2018，39，11： | 2 |
| 16 | Molecular weight determination of a newly synthesized guanidinylated disulfide-containing poly(amido amine) by gel permeation chromatography显示文摘A cationic gene delivery vector, guanidinylated disulfide-containing poly(amido amine)(CARCBA), was synthesized by Michael addition reaction between N,N′-cystaminebisacrylamide(CBA) and guanidine hydrochloride(CAR). Gel permeation chromatography(GPC) was used to evaluate the molecular weight of synthesized CAR-CBA. Polyethyleneimine(PEI) with molecular weight of 25 kDa was adopted as a reference, and polyethylene glycols(PEG) with different molecular weights were used to establish a standard curve for determining the molecular weight of CAR-CBA. The effects of two critical factors, namely columns and eluents,on the molecular weight measurement of CAR-CBA were investigated to optimize the GPC quantitative method. The results showed that Ultrahydrogel columns(120, 250) and HAc–NaAc(0.5 M, pH 4.5) buffer solution were the optimal column and GPC eluent, respectively.The molecular weight of the synthesized CAR-CBA was analyzed by the optimized GPC method and determined to be 24.66 kDa. | Haonan Xing Mei Lu Lei Xian Jinmin Zhang Tianzhi Yang Li Yang Pingtian Ding | 2017 | Asian Journal of Pharmaceutical Sciences2017，12，3： | 2 |
| 17 | Rift Valley Fever Virus and Yellow Fever Virus in Urine: A Potential Source of Infection显示文摘Dear Editor,In recent years,the incidence of human infections caused by emerging or re-emerging pathogens has rapidly increased.Diseases that were once regional now have the ability to spread globally in a short amount of time and pose a wider threat to public health(Weaver et al.2018).Yellow fever virus(YFV,family Flaviviridae,genus Flavivirus)is a mosquito-borne flavivirus that causes yellow fever in humans and has been endemic in Africa and Latin America for many years(Domingo et al.2018). | Meng Li Beibei Wang Liqiang Li Gary Wong Yingxia Liu Jinmin Ma Jiandong Li Hongzhou Lu Mifang Liang Ang Li Xiuqing Zhang Yuhai Bi Hui Zeng | 2019 | Virologica Sinica2019，34，3： | 1 |
| 18 | The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers显示文摘We investigate the effect of AlN/AlGaN superlattices(SLs) on crystal and optical properties of AlGN epitaxial layers. The result indicates that the crystal quality of AlGaN layers is consistent within a wide range of SLs thicknesses, while the optical properties are opposite. With SLs thickness decreasing from 20/44 to 17/36 and 15/29 nm, the full-width at half maximum of X-ray rocking curves for (0002)- and(1012)-plane of n-AlGaN layers grown on SLs are consistent of around 250 arcsec and 700 arcsec, respectively. Meanwhile, the center of the low optical transmittance band decreases from 326 to 279 nm and less than 266 nm as the SLs thickness decreases.280 nm deep ultraviolet light-emitting diodes(DUV-LEDs) structures are further regrown on the n-AlGaN layers.The electroluminescent intensities of samples are 30% higher than that of the sample whose low optical transmittance band appears around 279 nm. Optical simulations reveal that the SLs acts as distributed Bragg reflectors, thus less photons of the corresponding wavelength escape from the sapphire backside. | Shuo Zhang Yun Zhang Xiang Chen Yanan Guo Jianchang Yan Junxi Wang Jinmin Li | 2017 | Journal of Semiconductors2017，38，11： | 1 |
| 19 | Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer显示文摘High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes(UV-LEDs). In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer(used as nucleation layer, SNL) by a high-yield industrial metalorganic vapor phase epitaxy(MOVPE). The full width half maximum(FWHM) of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of(002) and(102) peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power(LOP) of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost. | Zejie Du Ruifei Duan Tongbo Wei Shuo Zhang Junxi Wang Xiaoyan Yi Yiping Zeng Junxue Ran Jinmin Li Boyu Dong | 2017 | Journal of Semiconductors2017，38，11： | 1 |
| 20 | Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode显示文摘The energy-efficient deep ultraviolet(DUV)optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy.In this work,we have prepared the strain-free AlN film with low dislocation density(DD)by graphene(Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals(QvdW)epitaxy is presented.The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process.Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode.Remarkably,it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch.Therefore,the low-strain state of the DUV light-emitting diode(DUV-LED)epitaxial structure is realized on the strain-free AlN template with Gr.Furthermore,the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire.An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy. | Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei | 2022 | Light(Science & Applications)2022，11，5： | 1 |
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