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| 1 | Nonlinear health evaluation for lithium-ion battery within full-lifespan显示文摘Lithium-ion batteries(LIBs), as the first choice for green batteries, have been widely used in energy storage, electric vehicles, 3C devices, and other related fields, and will have greater application prospects in the future. However, one of the obstacles hindering the future development of battery technology is how to accurately evaluate and monitor battery health, which affects the entire lifespan of battery use. It is not enough to assess battery health comprehensively through the state of health(SoH) alone, especially when nonlinear aging occurs in onboard applications. Here, for the first time, we propose a brand-new health evaluation indicator—state of nonlinear aging(SoNA) to explain the nonlinear aging phenomenon that occurs during the battery use, and also design a knee-point identification method and two SoNA quantitative methods. We apply our health evaluation indicator to build a complete LIB full-lifespan grading evaluation system and a ground-to-cloud service framework, which integrates multi-scenario data collection, multi-dimensional data-based grading evaluation, and cloud management functions. Our works fill the gap in the LIBs’ health evaluation of nonlinear aging, which is of great significance for the health and safety evaluation of LIBs in the field of echelon utilization such as vehicles and energy storage. In addition, this comprehensive evaluation system and service framework are expected to be extended to other battery material systems other than LIBs, yet guiding the design of new energy ecosystem. | Heze You Jiangong Zhu Xueyuan Wang Bo Jiang Hao Sun Xinhua Liu Xuezhe Wei Guangshuai Han Shicong Ding Hanqing Yu Weihan Li Dirk Uwe Sauer Haifeng Dai | 2022 | Journal of Energy Chemistry2022，31，9： | 4 |
| 2 | Settling behavior of spherical particles in vertical annulus:Experimental study and model development显示文摘Coiled tubing(CT)drilling technology offers significant advantages in terms of cost and efficiency for exploitations of unconventional oil and gas resources.However,the development of CT drilling technol-ogy is restricted by cuttings accumulation in the wellbore due to non-rotation of the drill string and limited circulating capacity.Cuttings cleaning becomes more difficult with the wall resistance of pipe-wellbore annulus on the cutting transport.Accurate description of particle transport process in the pipe-wellbore annulus is,therefore,important for improving the wellbore cleanliness.In this study,high-speed cam-era is used to record and analyze the settling process of particles in the transparent annulus filled with power-law fluids.A total of 540 tests were carried out,involving dimensionless diameters of 0.10-0.95 and particle Reynolds Numbers of 0.01-12.97,revealing the effect of the dimensionless diameter and particle Reynolds number on the annulus wall effect,and the wall factor model with an average relative error of2.75%was established.In addition,a dimensionless parameter,Archimedes number,independent of the settling velocity,was introduced to establish an explicit model of the settling velocity of spherical particles in the vertical annulus,with the average relative error of 7.89%.Finally,a calculation example was provided to show how to use the explicit model of settling velocity in annulus.The results of this study are expected to provide guidance for field engineers to improve the wellbore cleanliness of coiled tubing drilling. | Zhaopeng Zhu Mengmeng Zhou Xianzhi Song Shuo Zhu Gensheng Li Zhengming Xu Xuezhe Yao Buwen Yu | 2022 | Particuology2022，20，9： | 2 |
| 3 | Ⅲ–Ⅴ ternary nanowires on Si substrates: growth, characterization and device applications显示文摘Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group Ⅲ–Ⅴ semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of Ⅲ–Ⅴ structures as light sources and numerous other optical components on Si,which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires(NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of Ⅲ–Ⅴ semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary Ⅲ–Ⅴ NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary Ⅲ–Ⅴ NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the Ⅲ–Ⅴ ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary Ⅲ–Ⅴ NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years. | Giorgos Boras Xuezhe Yu Huiyun Liu | 2019 | Journal of Semiconductors2019，40，10： | 1 |
| 4 | The First High-quality Reference Genome of Sika Deer Provides Insights into High-tannin Adaptation显示文摘Sika deer are known to prefer oak leaves,which are rich in tannins and toxic to most mammals;however,the genetic mechanisms underlying their unique ability to adapt to living in the jungle are still unclear.In identifying the mechanism responsible for the tolerance of a highly toxic diet,we have made a major advancement by explaining the genome of sika deer.We generated the first high-quality,chromosome-level genome assembly of sika deer and measured the correlation between tannin intake and RNA expression in 15 tissues through 180 experiments.Comparative genome analyses showed that the UGT and CYP gene families are functionally involved in the adaptation of sika deer to high-tannin food,especially the expansion of the UGT family 2 subfamily B of UGT genes.The first chromosome-level assembly and genetic characterization of the tolerance to a highly toxic diet suggest that the sika deer genome may serve as an essential resource for understanding evolutionary events and tannin adaptation.Our study provides a paradigm of comparative expressive genomics that can be applied to the study of unique biological features in non-model animals. | Xiumei Xing Cheng Ai Tianjiao Wang Yang Li Huitao Liu Pengfei Hu Guiwu Wang Huamiao Liu Hongliang Wang Ranran Zhang Junjun Zheng Xiaobo Wang Lei Wang Yuxiao Chang Qian Qian Jinghua Yu Lixin Tang Shigang Wu Xiujuan Shao Alun Li Peng Cui Wei Zhan Sheng Zhao Zhichao Wu Xiqun Shao Yimeng Dong Min Rong Yihong Tan Xuezhe Cui Shuzhuo Chang Xingchao Song Tongao Yang Limin Sun Yan Ju Pei Zhao Huanhuan Fan Ying Liu Xinhui Wang Wanyun Yang Min Yang Tao Wei Shanshan Song Jiaping Xu Zhigang Yue Qiqi Liang Chunyi Li Jue Ruan Fuhe Yang | 2023 | Genomics, Proteomics & Bioinformatics2023，21，1： | 1 |
| 5 | Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy显示文摘Self-catalyzed GaAs nanowires(NWs) are grown on Si(111) substrates by molecular-beam epitaxy.The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated.For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter,the NWs grow vertically to the substrate surface.In contrast,when the As cell shutter is closed first,maintaining the Ga flux is found to be critical for the following growth of GaAs NWs,which can change the growth direction from [111] to <111>.The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences.Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. | Lixia Li Dong Pan Xuezhe Yu Hyok So Jianhua Zhao | 2017 | Journal of Semiconductors2017，38，10： | 0 |
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