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您的检索式：作者名="XU ShuoHeng"
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| 1 | Wire-feed laser additive manufacturing of dissimilar metals via dual molten pool interface interlocking mechanism显示文摘Intermetallic compounds produced in laser additive manufacturing are the main factors restricting the joint performance of dissimilar metals.To solve this problem,a dual molten pool interface interlocking mechanism was proposed in this study.Based on a dual molten pool interface interlocking mechanism,the dissimilar metals,aluminum alloy and stainless steel,were produced as single-layer and multilayer samples,using the wire-feed laser additive manufacturing directed energy deposition technology.The preferred parameters for the dual molten pool interface interlocking mechanism process of the dissimilar metals,aluminum alloy and stainless steel,were obtained.The matching relationship between the interface connection of dissimilar metals and the process parameters was established.The results demonstrated excellent mechanical occlusion at the connection interface and no apparent intermetallic compound layer.Good feature size and high microhardness were observed under a laser power of 660 W,a wire feeding speed of 55 mm/s,and a platform moving speed of 10 mm/s.Molecular dynamics simulations demonstrated a faster rate of aluminum diffusion in the aluminum alloy substrate to stainless steel under the action of the initial contact force than without the initial contact force.Thus,the dual molten pool interface interlocking mechanism can effectively reduce the intermetallic compound layer when dissimilar metals are connected in the aerospace field. | HE Yi ZHANG XiaoHan ZHAO Zhe XU ShuoHeng XIA Min ZHANG Chen HU YaoWu | 2023 | Science China(Technological Sciences)2023，66，4： | 1 |
| 2 | Nanoforming of transferred metal contacts for enhanced twodimensional field effect transistors显示文摘Two-dimensional transition metal chalcogenides(2D-TMDs)have attracted much attention because of their unique layered structure and physical properties for transistor applications.Mechanically transferred metal contacts on these low-dimensional materials or their homogeneous and heterogeneous multilayers have generated huge interest to avoid deposition damages.In this paper,we show that there are large physical gaps at both the edge contact and surface contact between the transferred electrodes and the 2D materials.A method called laser shock induced superplastic deformation(LSISD)is proposed to tackle this issue and enhance the performance of the transistors.The enhancement mechanism was investigated by molecular dynamics(MD)simulations of the nanoforming process,atomic force microscopy(AFM),scanning electron microscopy(SEM),transmission electron microscopy(TEM)characterizations of the interfaces,and density functional theory(DFT)modeling.The force effect of laser shock can reduce the contact gap between metals and semiconductors.The electrical performances of the transistors before and after LSISD,along with MD simulations,are used to find the optimal process parameters.In addition,this paper applies the LSISD method to the short-channel MoS_(2)/graphene vertical transistors to show potential improvement in interface contact and electrical properties.This paper demonstrates the first report on using mechanical force induced by laser shock to enhance metal–semiconductor interfaces and transistor performances. | Shuoheng Xu Zheng Huang Jie Guan Yaowu Hu | 2024 | Nano Research2024，17，4： | 0 |
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