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10篇 您的检索式:作者名="WEI Liuhong"
    题名 作者 年代 出处 被引量
1Waveform matching approach for fault diagnosis of high voltage transmission lines employing harmony search algorithm显示文摘WEI Liuhong GUO Wenxin WEN Fushuan 2010IET Generation Transmission and Distribution2010,4,7:1
2An online intelligent alarm-processing system for digital substations显示文摘WEI Liuhong GUO Wenxin WEN Fushuan 0,,3:1
3Waveformmatching approach for fault diagnosis of high voltagetransmission lines employing harmony search algorithm显示文摘Wei Liuhong Guo Wenxin Wen Fushuan 2010IET Generation Transmission and Distribution2010,4,7:1
4Anon-line intelligent alarm processing system for digitalsubstations显示文摘Wei Liuhong Guo Wenxin Wen Fushuan 2011IEEE Trans on Power Delivery2011,26,3:1
5An on-line intelligent alarm processing system for digital substations显示文摘WEI Liuhong GUO Wenxin WEN Fushuan 2011IEEE Trans on Power Delivery2011,26,3:1
6an online intelligent alarm-processing system for digital substations显示文摘Wei Liuhong Guo Wenxin Wen Fushuan 2011IEEE Transactions on Power Delivery2011,26,3:1
7An on-line intelligent alarm processing system for digital substations显示文摘WEI Liuhong GUO Wenxin WEN Fushuan 2011IEEE Trans on Power Delivery2011,26,3:1
8Waveform matching approach for fault diagnosis of a high- voltage transmission line employing harmony search algorithm 显示文摘WEI Liuhong GUO Wenxin WEN Fushuan 2010IET Generation Transmission & Distribution2010,4,7:1
9Manufacture enzynle - marke dregent box of canine pavo virus 显示文摘LiuHong - wei TianKe - gong LiangChuan - mei 1994Chinese live - stock and birds epidemiology1994,6,:1
10Dopant atoms as quantum components in silicon nanoscale devices显示文摘Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics.Xiaosong Zhao Weihua Han Hao Wang Liuhong Ma Xiaoming Li Wang Zhang Wei Yan Fuhua Yang 2018Journal of Semiconductors2018,39,6:0
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