2篇
您的检索式：作者名="V.M.Vishnyakov"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | A TEM Study of Microstructures in Chlorine-implanted Silicon显示文摘The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2. | J.H.Evans ZhangChonghong WangZhiguang T.Shibayama K.Sakaguchi H.Takahashi V.M.Vishnyakov S.E.Donnelly | 2002 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2002，，1： | 0 |
| 2 | Dose Dependence of Formation of Nanoscale Cavities in Helium-implanted 4H-SiC显示文摘Due to its superior mechanical and electrical properries,silicon carbide(SiC)is a technologically important material in the development of high-temperature,high-power,high-frequency electronic devices and in nuclear energy and waste technologies.In the former cases,helium implantation can be used to introduce | S.E.Donnelly V.M.Vishnyakov C.A.Faunce J.H.Evans | 2001 | IMP & HIRFL Annual Report2001，，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员