A TEM Study of Microstructures in Chlorine-implanted Silicon

查看全文 作　　者：[3]J.H.Evans;[1]ZhangChonghong;[1]WangZhiguang;[2]T.Shibayama;[1]K.Sakaguchi;[1]H.Takahashi;[3]V.M.Vishnyakov;[3]S.E.Donnelly 机构地区：[1]不详;[2]LaboratoryforUltra-functionMaterlals,CenterforAdvancedResearchofEnergyTechnology,HokkaidoUniversity,Sapporo,Japan.;[3]JoulePhysicsLaboratory,SchoolofSciences,UniversityofSalford,GreaterManchester,UK. 出　　处：《近代物理研究所和兰州重离子加速器实验室年报:英文版》索引2002年第1期,共2页 摘　　要：The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2. 关 键 词：透射电镜研究 氯离子注入 硅 显微结构 TEM EDS光谱 核物理实验