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1篇 您的检索式：作者名="TSAI ChenHan"

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		题名	作者	年代	出处	被引量
	1	Resistance switching for RRAM applications显示文摘Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.	CHEN Frederick T LEE HengYuan CHEN YuSheng HSU YenYa ZHANG LiJie CHEN PangShiu CHEN WeiSu GU PeiYi LIU WenHsing WANG SuMin TSAI ChenHan SHEU ShyhShyuan TSAI MingJinn HUANG Ru	2011	Science China(Information Sciences)2011，54，5：	3

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