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34篇 您的检索式：作者名="Simin A"

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	题名	作者	年代	出处	被引量
1	AlGaN/GaN metal- oxide- semiconductor heterostructure field- effect transis- tors on SiC substrates显示文摘	Khan M A Hu X Simin G	2000	Appl Phys Lett2000，77，：	2
2	Dietary Intake of Fruits and Vegetablesand Risk of Cardiovascular Disease显示文摘	Lydia A Bazzano Mary K Serdula Simin Liu	2003	Current atheroscl erosis reports2003，5，6：	1
3	Induced strain mechanism of current collapse in AlGaN/GaN heterostructure fieldeffect transistors显示文摘	SIMIN G KOUDYMOV A TARAKJI A	2001	ApplPhysLett2001，79，16：	1
4	AIGaN/GaN metaloxide-semiconductor heterostructure field-effect transistors on SiC substrates 显示文摘	KHAN M A HU X SIMIN G	2000	Appl Phys Lett2000，77，：	1
5	Multilayer Thick-film Technology as Applied to Design of Microwave Devices显示文摘	Kapitanova P V Simine A V Kholodnyak D V	2007	Journal of the European Ceramic Society2007，，27：	1
6	Si3N4/AIGaN/ GaN metal insulator semiconductor heterosturcture field effect transistors显示文摘	HU X KoUDYMOV A SIMIN G	2001	Appl Phys Lett2001，79，：	1
7	Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors显示文摘	Koudymov A Tarakji A	2001	Appl Phys Lett2001，79，：	1
8	Analysis of Integrin beta4 expression in human breast cancer:association with basallike tumors and prognostic significance显示文摘	Lu S Simin K Khan A		0，，4：	1
9	Strategies and results of atomic force microscopy in the study of cellular adhesion 显示文摘	Simin A Durrieu MC	2006	Micron2006，37，1：	1
10	Dietary intake of fruit and vegetables and risk of cardiovascular disease显示文摘	BAZZANO L A SERDULA M K LIU Simin	2003	Crurent Atherosclerosis Reports2003，5，：	1
11	Induced strain mechanism of current collapse in AlGaN/GaN heterostructructure filed-effect transisitors显示文摘	SIMIN G KOUDYMOV TARAKJI A	2001	Appl Phys Lett2001，79，16：	1
12	Can we use neopterin as marker of viral infections in pregnant women with symptoms of imminent spontaneous abortion?显示文摘	Bogavac M A Brkic S Simin N	2010	J Matern Fetal Neonatal Med2010，23，7：	1
13	Heavy metal biosorption by bacterial cells显示文摘	VECCHIO A FINOLI C SIMINE D D	1998	J Anal Chem1998，361，4：	1
14	Mechanism of radio-frequency current collapse in GaN -AlGaN field-effect transistors显示文摘	TARAKJI A SIMIN G ILINSKAYA N	2001	Appl Phys Lett2001，78，：	1
15	Selective area deposited blue GaN - InGaN multiple - quantum well light emitting diodes over silicon substrate 显示文摘	Yang J W Lunev A Simin G	2000	Appl Phys Lett2000，76，3：	1
16	AIGaN/InGaN/ GaN double heterostructure field-effect transistor显示文摘	Simin G Hu X Tarakji A	2001	Jpn J Appl Phys2001，40，11：	1
17	Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field -effect transistors显示文摘	HU X KOUDYMOV A SIMIN G	2001	Appl Phys Lett2001，79，17：	1
18	Compact model of current collapse in heterostructure field-effect transistors 显示文摘	KOUDYMOV A SHUR M S SIMIN G	2007	Electron Device Letters IEEE2007，28，5：	1
19	CPAP treatment rapidly improves Insulin Sensitivity in Patients with OSAS Am显示文摘	Igor A H Simin P S Martin R T	2004	J Respir Crit Care Med2004，，169：	1
20	Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates 显示文摘	YANG J W LUNEV A SIMIN G	2000	Applied Physics Letters2000，76，3：	1

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