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121篇 您的检索式：作者名="SCHRIMPF R D"

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	题名	作者	年代	出处	被引量
1	Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs显示文摘	Schmidt D M Fleetwood D M Schrimpf R D	1995	IEEE Trans Nucl Sci1995，42，6：	2
2	Trends in total-dose respor/se of modern bipolar transistors显示文摘	NOWLIN R N ENLOW E W SCHRIMPF R D	1992	IEEE Trans Nucl Sci1992，39，6：	1
3	Recent advances in understanding total dose effects in bipolar transistors显示文摘	SCHRIMPF R D		0，，03：	1
4	Modeling low dose rate effects in irradiated bipolar-base oxide显示文摘	GRAVES R J CIRBA C R SCHRIMPF R D		0，，06：	1
5	Simulating single-event burn out of n-channel power MOSFETs 显示文摘	JOHNSON G H HOHL J H SCHRIMPF R D	1993	IEEE Trans Electron Devices1993，40，5：	1
6	Gate-charge measurements for irradiated n-channl DMOS power transistors显示文摘	Yiin A J Schrimpf R D Galloway K F	1991	IEEE Trans Nucl Sci1991，38，6：	1
7	Single event transient pulse widths in digital microcircuits 显示文摘	GADLAGE M J SCHRIMPF R D BENEDETTO J M	2004	IEEE Trans Nucl Sci2004，51，6：	1
8	ELDRS in bipolar linear circuits:a review显示文摘	PEASE R L SCHRIMPF R D FLEETWOOD D M	2009	IEEE Transactions on Nuclear Science2009，56，4：	1
9	Trends in total-dose response of modern bipolar transistors显示文摘	NOWLIN R N ENLOW E W SCHRIMPF R D		0，，：	1
10	Modeling low-dose-rate effect in irradiated bipolar-base oxides 显示文摘	Graves R J Cirba C R Schrimpf R D	1998	IEEE Trans Nucl Sci1998，45，：	1
11	Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters显示文摘	WU A SCHRIMPF R D BARNABY H J	1997	IEEE Trans Nucl Sci1997，44，6：	1
12	Total dose effects in a linear voltage regulator 显示文摘	ADELL P C SCHRIMPF R D HOLMAN W T	2004	IEEE Trans Nuel Sci2004，51，6：	1
13	Single event transient pulse widths in digital microcircuits显示文摘	GADLAGE M J SCHRIMPF R D EATON P H		0，，06：	1
14	Gate- charge measurements for irradiated n-channel DMOS power transistors 显示文摘	YIIN A J SCHRIMPF R D GALLOWAY K F	1991	IEEE Transactions on Nuclear Science1991，38，6：	1
15	Single Event Transient Pulsewidths in Digital Microcircuits显示文摘	Gadlage M J Schrimpf R D Benedetto J M	2004	IEEE Trans on Nuclear Science2004，51，6：	1
16	Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures 显示文摘	WITCZAK S C SCHRIMPF R D FLEETWOOD D M	1997	IEEE Trans Nucl Sci1997，44，6：	1
17	Total-dose and single-event effects in switching DC/DC power converters显示文摘	Adell P C Schrimpf P D Choi R D	2002	IEEE Trans Nucl Sci2002，49，6：	1
18	A generalized model for the lifetime of microelectronic components ap plied to storage conditions显示文摘	Wise L J Schrimpf R D Parks H G	2001	Microelectronics Reliability2001，41，3：	1
19	Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control显示文摘	Barnaby H J Cirba C Schrimpf R D	1999	IEEE Trans Nucl Sci1999，46，6：	1
20	Analytical model for proton radiation effects in bipolar devices显示文摘	BARNABY H J SMITH S K SCHRIMPF R D	2002	IEEE Nuclear and Plasma Sciences Society2002，49，6：	1

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