| 1 | Angular Effects on F+ Etching SiC: MD Study显示文摘Molecular dynamics(MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K.The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle.With the steady-state etching established,a Si-C-F reactive layer is formed.It is found that the etching yield of Si is greater than that of C.In the F-containing reaction layer,the SiF species is dominant with incident angles less than 30o.For all incident angles,the CF species is dominant over CF2 and CF3. | CHEN Xu TIAN Shuping HE Pingni ZHAO Chengli SUN Weizhong ZHANG Junyuan CHEN Feng GOU Fujun | 2012 | Plasma Science and Technology2012，14，12： | 0 |
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