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4篇 您的检索式:作者名="GOU Fujun"
    题名 作者 年代 出处 被引量
1The influence of Laval nozzle throat size on supersonic molecular beam injection显示文摘In this study, finite element analysis(FEA) has been used to investigate the effects of different Laval nozzle throat sizes on supersonic molecular beam. The simulations indicate the Mach numbers of the molecular stream peak at different positions along the center axis of the beam, which correspond to local minimums of the molecular densities. With the increase of the throat diameter, the first peak of the Mach number increases first and then decreases, while that of the molecular number density increases gradually. Moreover, both first peaks shift progressively away from the throat. At the last part, we discuss the possible applications of our FEA approach to solve some crucial problems met in modern transportations.Xinkui He Xianfu Feng Mingmin Zhong Fujun Gou Shuiquan Deng Yong Zhao 2014Journal of Modern Transportation2014,22,2:1
2Angular Effects on F+ Etching SiC: MD Study显示文摘Molecular dynamics(MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K.The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle.With the steady-state etching established,a Si-C-F reactive layer is formed.It is found that the etching yield of Si is greater than that of C.In the F-containing reaction layer,the SiF species is dominant with incident angles less than 30o.For all incident angles,the CF species is dominant over CF2 and CF3.CHEN Xu TIAN Shuping HE Pingni ZHAO Chengli SUN Weizhong ZHANG Junyuan CHEN Feng GOU Fujun 2012Plasma Science and Technology2012,14,12:0
3An MD Study of the Temperature Effect on H Interacting with SiC (100)显示文摘Molecular dynamics simulations were performed to study the interaction between atomic hydrogen and silicon carbide.In the present study,we focus on the effect of the surface temperature on H interacting with silicon carbide.The simulation results show that the retention of H atoms in the sample decreases linearly with increasing surface temperature.The depth profile analysis shows that the sample is modified by H bombardment,and the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the bulk.However,near the surface region the densities of H,Si and C atoms are almost equivalent.In the modified layer,the bonds consist of Si-C and Si-H and C-H.The fraction of Si-C bonds is the greatest.Only a few C-H bonds are present.SUN Weizhong ZHAO Chengli ZHANG Junyuan CHEN Feng GOU Fujun 2012Plasma Science and Technology2012,14,12:0
4MD simulation on the interactions between CH_2 groups and the(001) surface of tungsten显示文摘This work studies the angle dependence of the interactions between impinging CH2 particles of 150 e V with the tungsten surface. The simulations show that the carbon atoms are much more easily bonded to the tungsten atoms than hydrogen atoms, though a few of the latter can also penetrate into the tungsten material. When the incidence angle is greater than 75°, the incident CH2 particles are reflected without break-ups. Below this angle, a W–C layer of about 0.5 nm is formed with another C, H-rich layer depositing on top of it. The molecular dynamics(MD) approach has proved to be a powerful tool to solve the structural problems at atomic length scale of various materials. Some of its possible applications to the railway track materials have also been discussed.Xianfu Feng Shuping Tian Xinkui He Fujun Gou Shuiquan Deng Yong Zhao 2014Journal of Modern Transportation2014,22,4:0
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