|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | 查看详情显示文摘 | J.Ma Z.Shi C.W.Nan | | 0，，18： | 1 |
| 2 | 查看详情显示文摘 | C.W.Nan M.I.Bichurin S.X.Dong D.Viehland and G.Srinivasan | | 0，，03： | 1 |
| 3 | 查看详情显示文摘 | C.W.Nan M.I.Bichurin S.X.Dong D.Viehland and G.Srinivasan | | 0，，03： | 1 |
| 4 | 查看详情显示文摘 | H.C.He J.Wang J.P.Zhou C.W.Nan | | 0，，08： | 1 |
| 5 | 查看详情显示文摘 | C.W.Nan M.I.Bichurin S.X.Dong D.Viehland and G.Srinivasan | | 0，，： | 1 |
| 6 | 查看详情显示文摘 | C.G.Duan C.W.Nan S.S.Jaswal E.Y.Tsymbal | | 0，，： | 1 |
| 7 | 查看详情显示文摘 | J.Ma J.M.Hu Z.Li C.W.Nan | | 0，，： | 1 |
| 8 | 查看详情显示文摘 | J.Ma J.M.Hu Z.Li C.W.Nan | | 0，，09： | 1 |
| 9 | 查看详情显示文摘 | C.W.Nan M.I.Bichurin S.X.Dong D.Viehland and G.Srinivasan | | 0，，03： | 1 |
| 10 | 查看详情显示文摘 | C.W.Nan M.I.Bichurin S.X.Dong D.Viehland and G.Srinivasan | | 0，，： | 1 |
| 11 | MAGNETOELECTRIC RESPONSES IN MULTIFERROIC COMPOSITE THIN FILMS显示文摘Multiferroic composite thinfilms of ferroelectrics and magnets have attracted ever-increasing interest in most recent years.In this review,magnetoelectric(ME)responses as well as their underlying ME coupling mechanisms in such multiferroic composite thinfilms are discussed,oriented by their potential applications in novel ME devices.Among them,the direct ME response,i.e.,magnetic-field control of polarization,can be exploited for micro-sensor applications(sensing magneticfield,electric current,light,etc.),mainly determined by a strain-mediated coupling interaction.The converse ME response,i.e.,electric-field modulation of magnetism,offers great opportunities for new potential devices for spintronics and in data storage applications.A series of prototype ME devices based on both direct and converse ME responses have been presented.The review concludes with a remark on the future possibilities and scientific challenges in thisfield. | JIA-MIAN HU JING MA JING WANG ZHENG LI YUAN-HUA LIN C.W.NAN | 2011 | Journal of Advanced Dielectrics2011，1，1： | 0 |
| 12 | STRUCTURES OF γ Al_2O_3 AND AlON STUDIED BY ^(27)Al NMR AND QUANTUM CHEMISTRY CALCTLATIONS显示文摘Al NMRand quantum chemistry calculation have been used to study thestructureof γ Al2O3 and AlON. The NMRspectra arecharacterized bythree distinctresonance peaksat114 , 66 and 12 , corresponding to 〔AlN4〕,〔AlO4〕and 〔AlO6〕respectively. The uantum chemistrycalculationsshowqd thatthe models with vacancieslocated at octahedralsitein B block are morestablethanthose with vacancieslocated attetrahedralsitein A blockforboth of γ Al2 O3 and AlON. In AlON, nitrogen atoms preferentially replace oxygen atoms in〔AlO4〕tetrahedrons, and the model with 〔AlN4〕is morestablethan that with 〔AlO4 xNx〕(x= 1 ,2 and 3) and 〔AlO6 - yNy〕(y= 1 ,2 ,3 and 4) , which isin agreement with theexperimental analysisby NMR. | X.M.Min ,Y. Daiand C.W.Nan National Key Laboratory of Advanced Technology for Materials Synthesis and Processing , Wuhan University ofTechnology , Wuhan 430070 ,China | 1999 | Acta Metallurgica Sinica(English Letters)1999，12，4： | 0 |
| 13 | STRUCTURE,CHEMICAL BONDS AND THER MOELECTIC PROPERTY OF Si DOPED BORON CARBIDES显示文摘Thecorrelation between composition, structure, chemical bond, and thermoelectric proper tiesof Si doped boroncarbidesisstudied using SCF DV Xαmethod. Thecalculationsshow that Siatom firstlysubstitutes Bor Catomson theend of boron carbidechain, then may occupyinterstitialsites when Siis dopedin boron carbide, anditisdifficultfor SitosubstituteBor Catom in thecenter of chain orintheicosahedron. Arepresentativestructural unitcontain ing an Si atom is 〔C B Si〕ε+ 〔B11 C〕ε , whilethe structural unit without Siis 〔C B B ( C)〕δ 〔B11 C〕δ+ . Afteradding Sitotheboroncarbides,theenergyrequired bythe dispro portionation reaction decreases,theconcentrationofthecarriersincreases,andthereare more pathsfor the bipolaron to hopping. At thesametime, the covalent bond becomes weaker, andthethermal conductivity decreases. Therefore, thethermoelectric property of Si dopedboron carbidesisimproved . | X.M.Min ,C.W.Nan and K.F.Cai National Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University ofTechnology , Wuhan 430070 ,China | 1999 | Acta Metallurgica Sinica(English Letters)1999，12，4： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员