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| 1 | A review on the dielectric materials for high energy-storage application显示文摘With the fast development of the power electronics,dielectric materials with high energy-storage density,low loss,and good temperature stability are eagerly desired for the potential application in advanced pulsed capacitors.Based on the physical principals,the materials with higher saturated polarization,smaller remnant polarization,and higher electrical breakdown field are the most promising candidates.According to this rule,so far,four kinds of materials,namely antiferroelectrics,dielectric glass-ceramics,relaxor ferroelectric and polymer-based ferroelectrics are thought to be more likely used in next-generation pulsed capacitors,and have been widely studied.Thus,this review serves to give an overall summary on the state-of-the-art progress on electric energy-storage performance in these materials.Moreover,some general future prospects are also provided from the existed theoretical and experimental results in this work,in order to propel their application in practice. | Xihong Hao | 2013 | Journal of Advanced Dielectrics2013,3,1: | 4 |
| 2 | High-permittivity polymer nanocomposites: Influence of interface on dielectric properties显示文摘Flexible dielectric composites with high permittivity have been extensively studied due to their potential applications in highdensity energy capacitors.In this review,effects of interface characteristics on the dielectric properties in the polymer-based nanocomposites with high permittivity are analyzed.The polymer-based dielectric composites are classified into two types:dielectric–dielectric(DD,ceramic particle-polymer)composites and conductor–dielectric(CD,conductive particle-polymer)composites.It is highly desirable for the dielectric–dielectric composites to exhibit high permittivity at low content of ceramic particles,which requires a remarkable interface interaction existing in the composite.For conductor–dielectric composites,a high permittivity can be achieved in composite with a small amount of conductor particle,but associated with a high loss.In this case,the interface between conductor and polymer with a good insulating characteristic is very important.Different methods can be used to modify the surface of ceramic/conductor particles before these particles are dispersed into polymers.The experimental results are summarized on how to design and make the desirable interface,and recent achievements in the development of these nanocomposites are presented.The challenges facing the fundamental understanding on the role of interface in high-permittivity polymer nanocomposites should be paid a more attention. | Zhi-Min Dang Jin-Kai Yuan Jun-Wei Zha Peng-Hao Hu Dong-Rui Wang Zhong-Yang Cheng | 2013 | Journal of Advanced Dielectrics2013,3,3: | 3 |
| 3 | A REVIEW ON LEAD-FREE PIEZOELECTRIC CERAMICS STUDIES IN CHINA显示文摘There are a large number of research publications on the hot topic of environmental friendly leadfree piezoelectric materials worldwide in the last decade.The number of researchers and institutions involved from China is much larger than other countries or regions.The publications by Chinese researchers cover a broad spectrum on the preparations,structures,properties and applications of lead-free piezoelectric ceramics.This has motivated us to come out with a review on recent advances in development of lead-free piezoelectric ceramics in China.The emphases are especially on the preparation and electric properties of barium titanate-based materials,bismuth sodium titanate and related materials,alkaline niobate and related materials,bismuth layerstructured materials,as well as texture engineering of ceramics and some of their single crystals.Hopefully,this could give further impetus to the researchers to continue their e®orts in this promising area and also draw the attentions from legislature,research o±ce,industrial and publics. | YI-QING LU YONG-XIANG LI | 2011 | Journal of Advanced Dielectrics2011,1,3: | 2 |
| 4 | Effects of polymorphic form and particle size of SiO_(2)fillers on the properties of SiO_(2)-PEEK composites显示文摘The effects of polymorphic form and particle size of SiO_(2)fillers on the dielectric,mechanical and thermal properties of SiO_(2)-Poly-etheretherketone(SiO_(2)-PEEK)composites were investigated in this paper.Strong low frequency(<10Hz)Debye-like dielectric dispersions could be observed for all samples.The dielectric permittivity at high frequencies of the composite exhibits little morphology or particle size-sensitive characteristics of the SiO_(2)fillers.All the composites obtained in this case demonstrate the dielectric permittivities of~3.5 at high frequencies.The crystalline a-cristobalite filled composite exhibits lower dielectric loss and mechanical strength,but larger thermal expansion coefficient and thermal conductivity,compared with the similar particle sized amorphous SiO_(2)filled one.The crystalline a-quartz filled composite demonstrates the lowest mechanical strength and high-est dielectric loss.An increase in particle size of the spherical fused silica fillers decreases the dielectric loss,while increases the thermal conductivity of the composite.The flexural strength of the composite reaches the maximum value of 113 MPa when the particle size of spherical SiO_(2)filler is~10μm.Particle packing by combining optimal amounts of differently sized spherical fused silica fillers leads to a substantial improvement of mechanical strength(153MPa)coupled with reasonable dielectric and thermal properties due to the synergic effect(dielectric permittivity(ε_(r))=3.35,dielectric loss(tanδ)=1.63×10−3@10 GHz,thermal conductivity(l)=0.74 W/m*k(90°C),coefficient of thermal expansion(a)=23.6ppm/°C and relative density(r)=99.72%). | Peng Jie Xue Shi Lin Liu Jian Jiang Bian | 2021 | Journal of Advanced Dielectrics2021,11,4: | 2 |
| 5 | Microwave dielectric properties and optical transmittance of SrTiO_(3)/ZnTiO_(3)heterolayer thin films fabricated by sol-gel processing显示文摘SrTiO_(3)/ZnTiO_(3)heterolayered thin films were fabricated by spin coating Sr-Ti and Zn-Ti sol-gel precursors on fused silica substrate.The SrTiO_(3)and ZnTiO_(3)were coated alternatively to form ABAB heterolayered thin films.The thickness of individual layers was tailored by controlling the coating layers.The structure characterization of the thin films showed independent structure of each layer while the microwave dielectric properties and optical band gaps can be tuned by changing the layer configuration.The effects of the layer configuration on the dielectric and optical properties were studied. | Yang Li Biao Xu Song Xia Peng Shi | 2020 | Journal of Advanced Dielectrics2020,10,6: | 2 |
| 6 | PROGRESSES AND FURTHER CONSIDERATIONS ON THE RESEARCH OF PEROVSKITE LEAD-FREE PIEZOELECTRIC CERAMICS显示文摘The research on lead-free piezoelectric ceramics has been one of the importantfields worldwide for years for the sustainable development of the world.In recent years,the author and his group concentrated their work on perovskite lead-free piezoelectric ceramics,especially on(Bi_(1/2)Na_(1/2))TiO_(3)(BNT)-and K_(1/2)Na_(1/2)NbO_(3)(KNN)-based ceramics.In this paper,the researches of the composition design on BNT-and KNN-based lead-free piezoelectric ceramics,the effects of doping on the properties of these ceramics,the study of the temperature stability of these ceramics,and the fabrication technique used in the author's group for these ceramics are reviewed,and the further considerations and some prospects to be resolved in coming years from the viewpoint of the device applications of these ceramics are suggested. | DINGQUAN XIAO | 2011 | Journal of Advanced Dielectrics2011,1,1: | 2 |
| 7 | Study on properties of ultra-low dielectric loss mPPO/MTCLT composites prepared by injection molding显示文摘A novel category of polyphenylene oxide/high-impact polystyrene(PPO/HIPS)alloy was used as the polymer matrix(abbreviated as mPPO)and loaded with different volume fractions(0,10,20,30,40,50 vol.%)of MgTiO_(3)-Ca_(0.7)La_(0.2)TiO_(3)(abbreviated as MTCLT)ceramics to prepare composites by injection molding.Its micromorphology,density,dielectric,thermal and mechanical properties were analyzed in detail.The experimental results show that the composites possess a compact microstructure because HIPS increases the fluidity of PPO.Due to the excellent dielectric properties of both mPPO and MTCLT,the composites have an extremely low dielectric loss.The realization of the high ceramic filler fraction greatly limits the thermal expansion of the polymer chain by introducing the interphase,so that the coefficient of thermal expansion of the composite material could be as low as 21.8 ppm/°C.At the same time,the presence of ceramic particles could reinforce the mechanical property of the compos-ites.When the ceramic filler fraction is higher than 20 vol.%,the bending strength of the composite material is around 110 MPa.When the ceramic filler fraction is 40 vol.%,the composite possesses the best comprehensive performance.The dielectric constant is 6.81,the dielectric loss is 0.00104,the thermal expansion coefficient is as low as 25.3 ppm/°C,and the bending strength is 110.4 MPa.Due to its excellent properties,this material can be a good candidate in the field of microwave communication. | Yahan Liu Haiyi Peng Xiaogang Yao Minmin Mao Kaixin Song Huixing Lin | 2022 | Journal of Advanced Dielectrics2022,12,3: | 1 |
| 8 | The nanostructure of barium dititanate prepared by hydrothermal method显示文摘The dielectric ceramic of barium dititanate compound BaTi_(2)O_(5) had been prepared through the hydrothermal process by applying different parameters,such as pH-value,reaction time,temperature and pressure.The prepared powders were examined by X-ray diffraction(XRD).The predominant phase was a monoclinic phase with lattice constants(a=16:6381,b=3:555,c=9:3406Å),(β=107:47°,α=γ=90°),and the unit cell volume(527Å^(3)).The surface morphology was demonstrated by Scanning Electron Microscopy(SEM).It exhibited the grains in spherical and elliptical shapes with high homogeneity.The shapes of nanostructure were analyzed by Transmission Electron Microscopy(TEM).The appearance of nanostructures like the nanoparticles and nano rods were found.The size of nanoparticles was in the range of 9–31 nm,and size of nanorods was 32–37 nm.The dielectric measurements were done by using LCR meter at different temperature and frequencies(10,50 and 100 kHz).It was clear that the Curie temperature had a high value up to(485℃).The relative permittivity was partially changed for two prepared samples regarding high pressure and long reaction time,which were the main preparation conditions of hydrothermal method. | Sarah L.Rasheed Emad K.Al-Shakarchi | 2019 | Journal of Advanced Dielectrics2019,9,2: | 1 |
| 9 | Dielectric and frequency-dependent transport properties of lanthanum-doped bismuth ferrite显示文摘Polycrystalline samples of Bi_(1-x)La_(x)FeO_(3)[x=0.5,0.6,0.7 and 0.8]were synthesized through high temperature solid state reaction method.The structural studies of the compounds were done using X-ray diffraction technique.Dielectric constant and dielectric loss were studied for various frequencies(100 Hz–10^(4)Hz)at different temperatures.The temperature-dependent non-Debye type relaxation process was suggested in the materials from the analysis of frequency-dependent electrical data at different temperatures.Temperature dependence of dc and ac conductivity at various frequencies showed negative temperature coefficient of resistance(NTCR)behavior.The frequency dependence of ac conductivity at different temperatures obeyed Jonscher’s universal power law.The temperature dependence of dc and ac conductivity was fitted to Arrhenius equation.The activation energies at different temperature ranges were calculated to know the charge species involved in the conduction process. | A.K.Sahu S.K.Satpathy Banarji Behera | 2019 | Journal of Advanced Dielectrics2019,9,4: | 1 |
| 10 | The effect of Ba/Sr ratio on the Curie temperature for ferroelectric barium strontium titanate ceramics显示文摘The powders of lead-free material namely(nonhazardous)barium strontium titanate(BST)with different stoichiometric compo-sitions have been synthesized by the sol-gel method.Ba_(1−x)Sr_(x)TiO_(3)(BST)materials possess the properties of both ferroelectric and dielectric materials.These materials have spontaneous polarization that can be reversed by an applied electric field and they remain polarized even when the applied external electric field is removed.Synthesized samples have been subjected to structural,morphological,and dielectric characterizations.In this study,BST nanopowders with different substitutions of x(where x=0.2,0.3,0.4,0.5,and 0.6)were prepared by the sol-gel method,which is an easy method with low power consumption and low tem-perature requirement and produces higher yield.Nanopowders had average particle sizes of 12-24 nm and particles sizes after sintering at 1000°C for 3 h were 197,267,79.80,63.09,and 63 nm.All resulting pellets had a polycrystalline structure.Crystal structure,space group,morphological characterization,and particle size were determined from the structural analysis using X-ray powder diffraction(XRD),energy-dispersive X-ray spectroscopy(EDX),and scanning electron microscopy(SEM).The dielec-tric measurements were made for BST pellets under different frequencies(1-200 kHz)from room temperature to 250℃.The dielectric constants for the bulk were 743,1566,1091,766,and 626 for x=0.2,0.3,0.4,0.5,and 0.6,respectively.From dielectric measurements,samples with x=0.2 and 0.3 had the Curie temperatures of 70℃ and 28.5℃,respectively,and remained intact below 0℃.The sample with x=0.3 had a good dielectric measurement and moderate dissipation factor;it may be used in capac-itance application as energy stores. | Hamed A.Gatea Iqbal S.Naji | 2020 | Journal of Advanced Dielectrics2020,10,5: | 1 |
| 11 | Influence of the sintering temperature on ferroelectric properties of potassium-sodium niobate piezoelectric ceramics显示文摘The effect of sintering condition on structure,microstructure,and ferroelectric properties of(K_(0.44)Na_(0.52)Li_(0.04))(Nb_(0.86)Ta_(0.10)Sb_(0.04))-O_(3)(KNL-NTS)has been investigated.Ceramic powders have been synthesized by the solid-state reaction method and sintered at different temperatures(1115℃,1125℃,and 1140℃).Then,samples were characterized by thermogravimetric analysis,X-ray diffraction,scanning electron microscopy,and impedance spectroscopy.Through XRD results,the perovskite structure and small peaks corresponding to a secondary phase were detected.Ceramics processed at the highest temperatures showed higher densities and good piezoelectric properties(d_(33),K_(p),and K_(t)),particularly specimens sintered at 1125℃ presented the highest piezoelectric performance. | J.A.Cortés J.Camargo M.F.Rachia F.Rubio-Marcos L.Ramajo M.Castro M.A.Ramírez | 2021 | Journal of Advanced Dielectrics2021,11,3: | 1 |
| 12 | Influence of film stretching on crystalline phases and dielectric properties of a 70/30 mol%poly(vinylidenefluoride-tetrafluoroethylene)copolymer显示文摘Polyvinylidene fluoride(PVDF)-based copolymers with tetrafluoroethylene(P(VDF-TFE)),trifluoroethylene(P(VDF-TrFE))or hexafluoropropylene(P(VDF-HFP))are of strong interest due to the underlying fundamental mechanisms and the potential ferro-,pyro-and piezo-electrical applications.Their flexibility and their adaptability to various shapes are advantageous in comparison to inorganic ferroelectrics.Here,we study the influence of stretching temperature on the crystalline phases and the dielectric prop-erties in P(VDF-TFE)films by means of Dielectric Relaxation Spectroscopy(DRS),Fourier-Transform InfraRed spectroscopy(FTIR),Wide-Angle X-ray Diffraction(WAXD),Differential Scanning Calorimetry(DSC)and Dynamic Mechanical Analysis(DMA).Especially,the effect of stretching and the influence of the temperature of stretching on the mid-temperature(T_(mid))transi-tion are studied in detail.The results show that stretching has a similar effect as that on PVDF,and we observe an increase in the fraction of ferroelectric b-phase with a simultaneous increment in both melting point(T_(m))and crystallinity(X_(c))of the copolymer.While an increase in the stretching temperature does not have a profound impact on the amount of ferroelectric phase,the stability of the ferroelectric phase seems to improve-as seen in the reduction of the Full Width at Half Maximum(FWHM)of the WAXD peaks in both parallel and perpendicular directions to the molecular chain axis.The observation is also supported by the reduction of dissipation losses with an increase in stretching temperature-as seen in DRS measurements.Finally,both stretching itself and the temperature of stretching affect the various molecular processes taking place in the temperature range of the T_(mid) transition. | Thulasinath Raman Venkatesan Anna A.Gulyakova Reimund Gerhard | 2020 | Journal of Advanced Dielectrics2020,10,5: | 1 |
| 13 | Structural,microstructural and dielectric characterizations of(Bi_(0.5)Na_(0.5))TiO_(3) based lead-free ferroelectric ceramics显示文摘(1-x)(Bi_(0.5)Na_(0.5))TiO_(3)-xBaTiO_(3) lead-free ceramics have been obtained from the conventional solid-state reaction sintering method.The structural properties were investigated from X-ray diffraction and Raman spectroscopy techniques.Results revealed well-crystallized ceramic samples with perovskite structure.Microstructural properties,obtained from scanning electron microscopy measurements,have shown high density with very low porosity level.The dielectric response,analyzed as a function of the temperature and several frequencies,showed very broad peaks with a strong frequency dependence of the temperature for the maximum dielectric permittivity for the modified system.Results were analyzed considering the influence of the BaTiO3 content on the studied physical properties. | B.R.Moya A.C.Silva A.Peláiz-Barranco J.D.S.Guerra | 2021 | Journal of Advanced Dielectrics2021,11,3: | 1 |
| 14 | Growth,crystalline quality and transition variation of ternary Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3) ferroelectric crystals显示文摘Bulk crystals of high Curie temperature(T_(C))24Pb(In_(1/2(Nb_(1/2))O_(3)-43Pb(Mg_(1/3)Nb_(2/3))O_(3)-33PbTiO_(3)(24PIN-43PMN-33PT)with 55 mm in diameter and 130mm in length were reproducibly grown by the bottom-seeded Bridgman method.The X-ray diffraction(XRD)spectrum indicated that the as-grown crystal was a single phase with rthombohedral structure at room temperature,the domain morphology and the phase transition sequence of R→T→C were observed,the full width at half maximum(FWHM)of X-ray rocking curve of(002)face was about 0.77°,and the defect density was inferred to 2.56×10^(10)cm^(-2).The measured density of the as-grown crystals was very close to the theoretical one.Variation of the transition temperature of the as-grown crystals along the growth direction revealed that T_(C) increased linearly along the growth direction and rthombohedral to tetrahedral phase transition temperature(T_(RT))gradually decreased in the middle part of the ingot. | Linghang Wang Zhuo Xu Zhenrong Li Yuhui Wan Junjie Gao Fei Li | 2013 | Journal of Advanced Dielectrics2013,3,1: | 1 |
| 15 | Contribution of piezoelectric effect,electrostriction and ferroelectric/ferroelastic switching to strain-electric field response of dielectrics显示文摘This paper presents a thorough study of the strain response of different types of electroceramics during dynamical electrical loading.It highlights important aspects to take into account in the experimental methodology and outlines general guidelines for the discussion and interpretation of the results.The contributions of piezoelectric effect,electrostriction and ferroelectric/ferroelastic domain switching to the strain produced during the application of an alternating electric field are discussed by describing the strainelectric field(S-E)loops of different dielectric ceramics in which each of these contributions are predominant.In particular,attention is given to the description of the strain evolution in the characteristic'butterfly loops'typically shown by ferroelectric materials.The strain-polarization loop is indicated as a useful means to reveal the interconnection between strain and polarization state during dynamical electrical loading.Strain rate is suggested as a powerful tool to obtain more detailed information regarding the mechanisms of the electric field-induced strain. | G.Viola T.Saunders X.Wei K.B.Chong H.Luo M.J.Reece H.Yan | 2013 | Journal of Advanced Dielectrics2013,3,1: | 1 |
| 16 | Structural and electrical properties of ferroelectric BiFeO_(3)/HfO_(2) gate stack for nonvolatile memory applications显示文摘Difficulties in the fabrication of direct interface of ferroelectric BiFeO_(3)/HfO_(2) on the gate of ferroelectric field effect transistor(FeFET)is well known.This paper reports the optimization and fabrication of ferroelectric/dielectric(BiFeO_(3)/HfO_(2))gate stack for the FeFET applications.RF magnetron sputtering has been used for the deposition of BiFeO_(3),HfO_(2) films and their stack.X-Ray diffraction(XRD)analysis of BiFeO_(3) shows the dominant perovskite phase of(104),(110)orientation at 2θ=32°at the annealing temperature of 500℃.XRD analysis also confirms the amorphous nature of the HfO2 film at annealing temperature of 400℃,500℃ and 600℃.Multiple angle analysis shows the variation ion the refractive index between 2.98–3.0214 for BiFeO_(3) and 2.74–2.9 for the HfO2 film with the annealing temperature.Metal/Ferroelectric/Silicon(MFS),Metal/Ferroelectric/Metal(MFM),Metal/Insulator/Silicon(MIS),and Metal/Ferroelectric/Insulator/Silicon(MFIS)structures have been fabricated to obtain the electric characteristic of the ferroelectric,dielectric and their stacks.Electrical characteristics of the MFIS structure show the memory improvement from 2.7 V for MFS structure to 4.65 V for MFIS structure with 8 nm of buffer dielectric layer.This structure also shows the breakdown voltage of 40 V with data retention capacity greater than 9×10^(9)iteration cycles. | Nitish Yadav Kamal Prakash Pandey Pramod Narayan Tripathiy | 2018 | Journal of Advanced Dielectrics2018,8,5: | 1 |
| 17 | Critical temperature below the Curie temperature of ferroelectric ceramics PZT显示文摘The article presents the results of research the pre-transitional features of the behavior of solid solutions based on lead zirconate-titanate.The presence of a“special”critical temperature T_(d)on the temperature dependences of the permittivityε(T)and the remanent polarization P_(r)(T),preceding the temperature of the paraelectric phase transition at the Curie temperature T_(C),is noted.In the temperature range T | D.V.Kuzenko | 2021 | Journal of Advanced Dielectrics2021,11,1: | 1 |
| 18 | DIELECTRIC RELAXATION IN RELAXOR FERROELECTRICS显示文摘In this review the dielectric properties of relaxor ferroelectrics are discussed and compared withthe properties of normal dielectrics and ferroelectrics. We try to draw a general picture ofdielectric relaxation starting from a textbook review of the underlying concepts and pay attentionto common behavior of relaxors rather than to the features observed in specific materials. We hopethat this general approach is beneficial to those physicists, chemists, material scientists and deviceengineers who deal with relaxors. Based on the analysis of dielectric properties, a comprehensivedefinition of relaxors is proposed: relaxors are defined as ferroelectrics in which the maximum inthe temperature dependence of static susceptibility occurs within the temperature range ofdielectric relaxation, but does not coincide with the temperature of singularity of relaxation timeor soft mode frequency. | ALEXEI A.BOKOV ZUO-GUANG YE | 2012 | Journal of Advanced Dielectrics2012,2,2: | 1 |
| 19 | Ferroelectric HfO_(2)-based materials for next-generation ferroelectric memories显示文摘Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed. | Zhen Fan Jingsheng Chen John Wang | 2016 | Journal of Advanced Dielectrics2016,6,2: | 1 |
| 20 | Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO_(2) substrate显示文摘We have investigated dielectric properties of aromatic polythiourea(ArPTU,a polar polymer containing high dipolar moments with very low defect levels)thin films that were developed on Pt/SiO_(2) substrate.The detected response is compared to the response of commercially available polymers,such as high density polyethylene(HDPE)and polypropylene(PP),which are at present used in foil capacitors.Stable values of the dielectric constantε'≈5(being twice higher than in HDPE and PP)over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications. | A.Eršte L.Fulanović L.Čoga M.Lin Y.Thakur Q.M.Zhang V.Bobnar | 2016 | Journal of Advanced Dielectrics2016,6,1: | 1 |