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| 1 | Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]显示文摘There is a rapidly growing demand to use silicon and silicon nitride(Si3N4) integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology,complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si3N4-based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip. | Ananth Z.Subramanian Eva Ryckeboer Ashim Dhakal Frédéric Peyskens Aditya Malik Bart Kuyken Haolan Zhao Shibnath Pathak Alfonso Ruocco Andreas De Groote Pieter Wuytens Daan Martens Francois Leo Weiqiang Xie Utsav Deepak Dave Muhammad Muneeb Pol Van Dorpe Joris Van Campenhout Wim Bogaerts Peter Bienstman Nicolas Le Thomas Dries Van Thourhout Zeger Hens Gunther Roelkens Roel Baets | 2015 | Photonics Research2015，3，5： | 7 |
| 2 | Optical frequency synthesizer with an integrated erbium tunable laser显示文摘Optical frequency synthesizers have widespread applications in optical spectroscopy,frequency metrology,and many other fields.However,their applicability is currently limited by size,cost,and power consumption.Silicon photonics technology,which is compatible with complementary-metal-oxide-semiconductor fabrication processes,provides a low-cost,compact size,lightweight,and low-power-consumption solution.In this work,we demonstrate an optical frequency synthesizer using a fully integrated silicon-based tunable laser.The synthesizer can be self-calibrated by tuning the repetition rate of the internal mode-locked laser.A 20 nm tuning range from 1544 to 1564 nm is achieved with~10−13 frequency instability at 10 s averaging time.Its flexibility and fast reconfigurability are also demonstrated by fine tuning the synthesizer and generating arbitrary specified patterns over time-frequency coordinates.This work promotes the frequency stability of silicon-based integrated tunable lasers and paves the way toward chip-scale lowcost optical frequency synthesizers. | Ming Xin Nanxi Li Neetesh Singh Alfonso Ruocco Zhan Su Emir Salih Magden Jelena Notaros Diedrik Vermeulen Erich P.Ippen Michael R.Watts Franz X.Kartner | 2019 | Light(Science & Applications)2019，8，1： | 2 |
| 3 | Broadband 200-nm second-harmonic generation in silicon in the telecom band显示文摘Silicon is well known for its strong third-order optical nonlinearity,exhibiting efficient supercontinuum and four-wave mixing processes.A strong second-order effect that is naturally inhibited in silicon can also be observed,for example,by electrically breaking the inversion symmetry and quasi-phase matching the pump and the signal.To generate an efficient broadband second-harmonic signal,however,the most promising technique requires matching the group velocities of the pump and the signal.In this work,we utilize dispersion engineering of a silicon waveguide to achieve group velocity matching between the pump and the signal,along with an additional degree of freedom to broaden the second harmonic through the strong third-order nonlinearity.We demonstrate that the strong self-phase modulation and cross-phase modulation in silicon help broaden the second harmonic by 200 nm in the O-band.Furthermore,we show a waveguide design that can be used to generate a second-harmonic signal in the entire nearinfrared region.Our work paves the way for various applications,such as efficient and broadband complementarymetal oxide semiconductor based on-chip frequency synthesizers,entangled photon pair generators,and optical parametric oscillators. | Neetesh Singh Manan Raval Alfonso Ruocco Michael R.Watts | 2020 | Light(Science & Applications)2020，9，1： | 2 |
| 4 | Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μm显示文摘Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand.Due to two-photon absorption in silicon,however,much nonlinear research is shifting towards unconventional photonics platforms.In this work,we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near-to shortwave-infrared.With input pulses of 18 pJ in energy,the generated signal spans the wavelength range from the edge of the silicon transmission window,approximately 1.06 to beyond 2.4μm,with a−20 dB bandwidth covering 1.124–2.4μm.An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ(−35 dB bandwidth).We also measured the coherence over an octave,obtaining|g_()12^(1)(λ)>90%,in good agreement with the simulations.In addition,we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications.This research paves the way for applications,such as chip-scale precision spectroscopy,optical coherence tomography,optical frequency metrology,frequency synthesis and wide-band wavelength division multiplexing in the telecom window. | Neetesh Singh Ming Xin Diedrik Vermeulen Katia Shtyrkova Nanxi Li Patrick T Callahan Emir Salih Magden Alfonso Ruocco Nicholas Fahrenkopf Christopher Baiocco Bill P-P Kuo Stojan Radic Erich Ippen Franz X Kärtner Michael R Watts | 2017 | Light(Science & Applications)2017，6，1： | 1 |
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