维普期刊资源整合服务平台（V6.5）

42篇 您的检索式：期刊名="SSE"

选中清除导出查看参考文献查看引证文献引用追踪共3页首页上一页第1页下一页末页 /3 跳转

	题名	作者	年代	出处	被引量
1	Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers显示文摘	LEE J W JUNG P G DEVRE M	2002	SSE2002，46，：	1
2	Transition from pentode to triode-like characteristics in field eflleet transistor 显示文摘	NEUMARK G F RITrER E S	1976	SSE1976，10，：	1
3	Antimonide- based compound semiconductors for electronic devices : a review 显示文摘	BENNETT B R MAGNO R BOOS J B	2005	SSE2005，49，12：	1
4	An analytical model for the saturation characteristics of bipolar-mode static induction transistors 显示文摘	YANG J H LI S Y WANG T M	1999	SSE1999，43，：	1
5	A review of SiC static induction transistor development for high-frequency power amplifiers 显示文摘	SUNG Y M CASADY J B DUFRENE J B	2002	SSE2002，46，5：	1
6	Investigation of phase change Si2Sb2Te5material and its application in chalcogenide random access memory显示文摘	ZHANG T SONG Z T LIU B	2007	SSE2007，51，6：	1
7	Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour显示文摘	DONOVAL D VRBICKY A MAREK J	2008	SSE2008，52，6：	1
8	Carrier transport simulation for bulk AlxGa1-xAs with a Γ-L-X band structure based on Lei-Ting balance equations 显示文摘	CAO J C LEI X L	1996	SSE1996，39，7：	1
9	Fowler-nordheim high electric field stress of power VDMOSFETs 显示文摘	RISTIC G S PEJOVIC M M	2005	SSE2005，49，7：	1
10	Influence of oxynitride passivation on the microwave perfooemance of A1GaN/GaN HEMTs 显示文摘	DESMARIS V SHIU J Y RORSMAN N	2008	SSE2008，52，5：	1
11	Impact of plasma pie-treatment before SiNx passivation on AIGaN/GaN HFETs electrical traps 显示文摘	GUHEL Y	2005	SSE2005，49，10：	1
12	Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading显示文摘	EBONG A ARTHUR S DOWNEY E	2003	SSE2003，47，：	1
13	Determination of gatebias dependent source drain series resistance and effective channel length for advanced MOS devices 显示文摘	HO C S LO Y C CHANG Y H	2006	SSE2006，50，1112：	1
14	Electrical properties of high permittivity ZrO2 gate dielectrics on strained- Si 显示文摘	MAITI C K DALAPATI G K CHATYERJEE S	2004	SSE2004，48，12：	1
15	Unified model for short-channel poly-Si TFTs 显示文摘	INIIGUEZ B XU Z FJELDLY T A	1999	SSE1999，43，11：	1
16	Electrical characteristics of highk dielectric film grown by direct sputtering method 显示文摘	SEN B	2006	SSE2006，50，2：	1
17	Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFETs 显示文摘	WONG H S WHITE M H KRUTSICK T J	1987	SSE1987，30，9：	1
18	A new extraction method of poly-Si TIfF model parameters in the leakage region 显示文摘	WU W J YAO R H ZHENG X R	2007	SSE2007，51，5：	1
19	Service-sectorcompetition,innovationandR&D显示文摘	Tingvall Karpaty	2008	SSE/EFIWorkingPaperSeriesinEconomicsandFinance2008，，：	1
20	Direct demonstration of the ‘ virtual gate ' mechanism for current collapse in A1GaN GaN HFETs 显示文摘	WELLS A M UREN M J BALMER R S	2005	SSE2005，49，2：	1

返回顶部每页显示：

共3页首页上一页第1页下一页末页 /3 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示