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| 1 | Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition显示文摘 | Changyong Lan Ziyao Zhou Zhifei Zhou Chun Li Lei Shu Lifan Shen Dapan Li Ruoting Dong SenPo Yip Johnny C. Ho | 2018 | Nano Research2018，11，6： | 12 |
| 2 | Human enterovirus 71 and hand, foot and mouth disease 显示文摘 | Wong SS Yip CC Lan SK | 2010 | Epidemiol Infect2010，138，8： | 1 |
| 3 | Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors显示文摘Amorphous indium-gallium-zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications;however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm^2-V^-1·s^-1 and on/off current ratio of ~ 10^6. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies. | Fangzhou Li SenPo Yip Ruoting Dong Ziyao Zhou Changyong Lan Xiaoguang Liang Dapan Li You Meng Xiaolin Kang Johnny C. Ho | 2019 | Nano Research2019，12，8： | 1 |
| 4 | Clinical and molecular epidemiol- ogy of human rhinovirus C in children and adults in Hong Kong reveals a possible distinct human rhinovirus C subgroup 显示文摘 | Lan SK Yip CC Lin AW | 2009 | J In- feet Dis2009，200，7： | 1 |
| 5 | Clolesterol-lowering effects of a proprietary chinese red-yeast-rice dietary supplement显示文摘 | David Heber lan Yip Judith M AshLey | 1999 | A m J Clin Nutr1999，，69： | 1 |
| 6 | Time course of platelet ac- tivation and von Willebrand factors in patients with non-valvular atrial fibrillation after ischemic stroke 显示文摘 | Yip HK Lai SL Lan MY | 2007 | Circ J2007，71，3： | 1 |
| 7 | Co-existence of multiple strains of two novel porcine bocavirnses in the same pig, a pre- viously undescribed phenomenon in members of the family Par- voviridae, and evidence for inter- and intra-host genetic diversity and recombination 显示文摘 | Lan S K Woo P C Yip C C | 2011 | J Gen Virol2011，92，： | 1 |
| 8 | Time course of platelet activation and von Willebrand factor in patients with non-valvular atrial fibrillation after ischemic stroke显示文摘 | Yip HK Lai SL Lan MY | 2007 | Circ J2007，71，3： | 1 |
| 9 | Towards high-mobility In2xGa2-2xO3 nanowire field-effecttransistors显示文摘Recently, owing to the excellent electrical and optical properties, n-type In203nanowires (NWs) have attracted tremendous attention for application in memorydevices, solar cells, and ultra-violet photodetectors. However, the relatively lowelectron mobility of In203 NWs grown by chemical vapor deposition (CVD) haslimited their further utilization. In this study, utilizing in-situ Ga alloying,highly crystalline, uniform, and thin In2xGa2-2xO3 NWs with diameters down to30 nm were successfully prepared via ambient-pressure CVD. Introducing anoptimal amount of Ga (10 at.%) into the In2O3 lattice was found to effectivelyenhance the crystal quality and reduce the number of oxygen vacancies in theNWs. A further increase in the Ga concentration adversely induced the formationof a resistive β-Ga203 phase, thereby deteriorating the electrical properties ofthe NWs. Importantly, when configured into global back-gated NW field-effecttransistors, the optimized Inl.8Ga0.2O3 NWs exhibit significantly enhanced electronmobility reaching up to 750 cm2.V-l.s^-1 as compared with that of the pure In203NW, which can be attributed to the reduction in the number of oxygen vacanciesand ionized impurity scattering centers. Highly ordered NW parallel arrayeddevices were also fabricated to demonstrate the versatility and potency of theseNWs for next-generation, large-scale, and high-performance nanoelectronics,sensors, etc. | Ziyao Zhou Changyong Lan SenPo Yip Renjie Wei Dapan Li Lei Shu Johnny C. Ho | 2018 | Nano Research2018，11，11： | 1 |
| 10 | Time course of platelet activation and yon Willebrand factor in patients with non-valvular atrial fibrillation after ischemic stroke显示文摘 | Yip H K Lai S L Lan M Y | 2007 | Circ J2007，71，3： | 1 |
| 11 | 聚合材料管状微型元件成形设备和模具的开发(英文)显示文摘介绍了有关台式热压印机系统及模具的开发,使其能实现聚合材料管状微型元件的批量生产,以满足不同的应用要求。开发的过程中考虑了多种因素的影响,如机器的动态性能、模具精度导轨、模具的加热和冷却、加工原料的送取自动化、控制策略等。开发的过程同样也参考了有限元分析及一系列实验的结果。提到的一体机系统现在已经加工组装完成,并进行了几个示范元件的成形测试,且取得了良好的结果。 | Jie ZHAO Arthur Lan Kuan YIP Yi QIN Akhtar RAZALI Zhi-cong FEI | 2012 | 中国有色金属学会会刊:英文版2012，22，S2： | 0 |
| 12 | The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors显示文摘Due to the ultra-thin nature and moderate carrier mobility,semiconducting two-dimensional(2D)materials have attracted extensive attention for next-generation electronics.However,the gate bias stress instability and hysteresis are always observed in these 2D materials-based transistors that significantly degrade their reliability for practical applications.Herein,the origin of gate bias stress instability and hysteresis for chemical vapor deposited monolayer WS2 transistors are investigated carefully.The transistor performance is found to be strongly affected by the gate bias stress time,sweeping rate and range,and temperature.Based on the systematical study and complementary analysis,charge trapping is determined to be the major contribution for these observed phenomena.Importantly,due to these charge trapping effects,the channel current is observed to decrease with time;hence,a rate equation,considering the charge trapping and time decay effect of current,is proposed and developed to model the phenomena with excellent consistency with experimental data.All these results do not only indicate the validity of the charge trapping model,but also confirm the hysteresis being indeed caused by charge trapping.Evidently,this simple model provides a sufficient explanation for the charge trapping induced gate bias stress instability and hysteresis in monolayer WS2 transistors,which can be also applicable to other kinds of transistors. | Changyong Lan Xiaolin Kang You Meng Renjie Wei Xiuming Bu SenPo Yip Johnny C.Ho | 2020 | Nano Research2020，13，12： | 0 |
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