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| 1 | Uniform, fast, and reliable CMOS compatible resistive switching memory显示文摘Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM. | Yunxia Hao Ying Zhang Zuheng Wu Xumeng Zhang Tuo Shi Yongzhou Wang Jiaxue Zhu Rui Wang Yan Wang Qi Liu | 2022 | Journal of Semiconductors2022，43，5： | 1 |
| 2 | A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits显示文摘The full memristive network hardware features high density and excellent scalability.However,recent researches on the full memristive network have been limited to a single-layer network,due to the lack of effective and flexible communication between neurons.In this design,we demonstrate a neuromorphic core based on Ag/SiO_(2)/Au threshold switching memristor,which has built-in asynchronous address event representation(AER)circuits to provide flexible communication between neurons.Since temporally sparse spikes are the medium of communication between neurons,the AER circuits are designed to transmit spikes serially which have been encoded with neurons’addresses before transmission.With the asynchronous circuits design,the AER circuits will detect neurons’output in real-time.To test the performance of the neuromorphic core,we designed a behavioral simulator for the neuromporphic core to simulate the liquid state machine(LSM)network,which achieves a 100%recognition rate in the free spoken digital dataset.The simulation results show that the neuromorphic core obtains 35 times higher performance than the CPU and111 times higher energy efficiency than the GPU. | Jinsong WEI Jilin ZHANG Xumeng ZHANG Zuheng WU Rui WANG Jian LU Tuo SHI Mansun CHAN Qi LIU Hong CHEN | 2022 | Science China(Information Sciences)2022，65，2： | 0 |
| 3 | Voltage-control oscillator based on Pt/C/NbO_x/TiN device with highly improved threshold switching performances显示文摘Oscillator is a common key component of electronic systems.The periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc. | Wei Wang ZuHeng Wu Tuo Shi YongZhou Wang Sen Liu RongRong Cao Hui Xu Qi Liu QingJiang Li | 2019 | Science China(Physics,Mechanics & Astronomy)2019，62，12： | 0 |
| 4 | Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing显示文摘In this work,by incorporating different electrodes(Ta/Ti)onto TaOxdielectric layer,we studied both the conductance reading and conductance updating(long term potentiation and depression)linearities in the two RRAM devices.Owing to the composition modulation(CM)mechanism,the Ta-electrode device shows better conductance reading and updating linearities.The RRAM device linearities directly influence the performance of the neural network when the devices are used as synapses.System evaluation of a two-layer neural network considering the conductance reading and updating linearity factors further confirm that both the training and inference accuracies of Ta electrode device are better than those of the Ti electrode one.We believe that this work could serve as a powerful reference for engineering synaptic devices with good linearity for neuromorphic computing applications. | YiLin Fang Tuo Shi XuMeng Zhang ZuHeng Wu JunJie An JinSong Wei Jian Lu Qi Liu | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，9： | 0 |
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