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您的检索式：作者名="Yunlei Teng"
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| 1 | Explicating the Role of Metal Centers in Porphyrin-Based MOFs of PCN-222(M) for Electrochemical Reduction of CO_(2)显示文摘The porphyrin-based MOFs formed by combining Zrclusters and porphyrin carboxylic acids with clear M-Nactive centers show unique advantages in electrocatalytic reduction of CO(CORR). However, its conductivity is still the bottleneck that limits its catalytic activity due to the electrical insulation of the Zr cluster. Therefore, the porphyrin-based MOFs of PCN-222(M)(M = Mn, Co, Ni, Zn) with explicit M-Ncoordination were combined with the highly conductive material carbon nanotube(CNT) for discussing the influence of metal centers on the CORR performance based on theoretical calculations and experimental observations. The results show that the PCN-222(Mn)/CNT, PCN-222(Co)/CNT, and PCN-222(Zn)/CNT all exhibit high selectivity to CO(FECO > 80%) in the range of-0.60 to-0.70 V vs. RHE. The FECOmax of PCN-222(Mn)/CNT(-0.60 V vs. RHE), PCN-222(Co)/CNT(-0.65 V vs. RHE), and PCN-222(Zn)/CNT(-0.70 V vs.RHE) are 88.5%, 89.3% and 92.5%, respectively. The high catalytic activity of PCN-222(Mn)/CNT and PCN-222(Co)/CNT comes from the excellent electron mobility of their porphyrin rings and their low ΔG*COOH(0.87 and 0.58 eV). It reveals that the strength of backbonding π of the transition metal and its influence on the electron mobility in the porphyrin ring can affect its CORR activity. | Mengjie Liu Mengting Peng Baoxia Dong Yunlei Teng Ligang Feng Qiang Xu | 2022 | Chinese Journal of Structural Chemistry2022，41，7： | 1 |
| 2 | Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy显示文摘Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics. | Jiuxiang Dai Teng Yang Zhitong Jin Yunlei Zhong Xianyu Hu Jingyi Zou Weigao Xu Tao Li Yuxuan Lin Xu Zhang Lin Zhou | 2022 | Nano Research2022，15，11： | 1 |
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