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7篇 您的检索式：作者名="Wu Hangjun"

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		题名	作者	年代	出处	被引量
	1	Slow light enhanced near infrared luminescence in CeO2:Er3+,Yb3+ inverse opal photonic crystals显示文摘	Yang Zhengwen Wu Hangjun Li Jun	2015	Journal of Alloys and Compounds2015，641，：	1
	2	Controllable transport of water through nanochannel by rachet-like mechanism显示文摘	Lu Hangjun Nie Xuechuan Wu Fengmin	2012	Journal of Chemical Physics2012，136，17：	1
	3	Controllable transport of water through nanochannel by rachet-like mechanism 显示文摘	Lu Hangjun Nie Xuechuan Wu Fengmin	2012	Journal of Chemical Physics2012，136，17：	1
	4	Preparation and upconversion emission properties of Yb, Er co-doped Y 2 Ti 2 O 7 upconversion inverse opal显示文摘	Zhengwen Yang Jialun Zhu Dong Yan Hangjun Wu Rongfei Wang Zhiguo Song Xue Yu Yong Yang Dacheng Zhou Zhaoyi Yin Jianbei Qiu	2012	Optical Materials2012，，：	1
	5	The effective thermal conductivity of porous media based on statistical self- similarity显示文摘	Kou Jianlong Wu Fengmin Lu Hangjun	2009	Physics Letters A2009，374，1：	1
	6	Morphology transition in a heteroepitaxial system: Co/Cu(111)显示文摘The initial stages of multilayer Co thin film grown on Cu(111) surface were simulated by means of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters were presented. The effects of edge diffusion along the islands and mass transport between interlayers were included in the simulation model. Emphasis was placed on revealing the transition of growth morphology in heteroepitaxial Co/Cu(111) system with the changing of surface temperature. The simulation results show that the dendritic islands form at low temperature (T=210 K), while compact islands grow at room temperature (RT). The Volmer-Webber (three-dimensional, 3D) growth mode is presented due to the relative higher Ehrlich-Schwoebel (ES) barrier. Our simulation results are in good agreement with the real scanning tunneling microscopy (STM) experiments.	WU Fengmin LU Hangjun FANG Yunzhang	2006	Rare Metals2006，25，z1：	0
	7	Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface显示文摘The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier EB=0.1~0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.	Wu Fengmin Lu Hangjun	2006	Journal of Rare Earths2006，24，z1：	0

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