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您的检索式：作者名="Wanwang Yang"
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| 1 | Ferroelectricity of hafnium oxide-based materials:Current status and future prospects from physical mechanisms to device applications显示文摘The finding of the robust ferroelectricity in HfO_(2)-based thin films is fantastic from the view point of both the fundamentals and the applications.In this review article,the current research status of the future prospects for the ferroelectric HfO_(2)-based thin films and devices are presented from fundamentals to applications.The related issues are discussed,which include:1)The ferroelectric characteristics observed in HfO_(2)-based films and devices associated with the factors of dopant,strain,interface,thickness,defect,fabrication condition,and more;2)physical understanding on the observed ferroelectric behaviors by the density functional theory(DFT)-based theory calculations;3)the characterizations of microscopic and macroscopic features by transmission electron microscopes-based and electrical properties-based techniques;4)modeling and simulations,5)the performance optimizations,and 6)the applications of some ferroelectric-based devices such as ferroelectric random access memory,ferroelectric-based field effect transistors,and the ferroelectric tunnel junction for the novel information processing systems. | Wanwang Yang Chenxi Yu Haolin Li Mengqi Fan Xujin Song Haili Ma Zheng Zhou Pengying Chang Peng Huang Fei Liu Xiaoyan Liu Jinfeng Kang | 2023 | Journal of Semiconductors2023，44，5： | 0 |
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