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4篇 您的检索式：作者名="Wang Xinkun"

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		题名	作者	年代	出处	被引量
	1	Detection of laser-induced optical defects based on image segmentation显示文摘A number of vision-based methods for detecting laser-induced defects on optical components have been implemented to replace the time-consuming manual inspection.While deep-learning-based methods have achieved state-of-the-art performances in many visual recognition tasks,their success often hinges on the availability of a large number of labeled training sets.In this paper,we propose a surface defect detection method based on image segmentation with a U-shaped convolutional network(U-Net).The designed network was trained on paired sets of online and offline images of optics from a large laser facility.We show in our experimental evaluation that our approach can accurately locate laser-induced defects on the optics in real time.The main advantage of the proposed method is that the network can be trained end to end on small samples,without the requirement for manual labeling or manual feature extraction.The approach can be applied to the daily inspection and maintenance of optical components in large laser facilities.	Xinkun Chu Hao Zhang Zhiyu Tian Qing Zhang Fang Wang Jing Chen Yuanchao Geng	2019	High Power Laser Science and Engineering2019，7，4：	2
	2	Rapid finalization for drip irrigation emitters based on rapid prototyping and manufacturing 显示文摘	Wei Zhengying Wang Xinkun Tang Yiping	2002	Transactions of the CSAE2002，，9：	1
	3	Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots显示文摘Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the opticalperformance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTAtreatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with theas-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at800 ℃. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treatedInAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL)and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.	Dandan Ning Yanan Chen Xinkun Li Dechun Liang Shufang Ma Peng Jin Zhanguo Wang	2020	Journal of Semiconductors2020，41，12：	1
	4	Rapid Finalization for Drip Irrigation Emitters Based on Rapid Prototyping & Manufacturing(RP&M) 显示文摘	Wei Zhengying Wang Xinkun Tang Yiping	2002	Transactions of the CSAE2002，18，5：	1

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