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您的检索式：作者名="Umesh Chand"
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| 1 | Effect of different synthesis techniques on structural, magnetic and magneto-transport properties of Pr_(0.7)Sr_(0.3)MnO_3 manganite显示文摘We investigated the effect of different synthesis techniques on the structural, magnetic and magneto-transport properties of Pr0.7Sr0.3MnO3 (PSMO) samples. The samples were synthesized by three different techniques: solid state reaction, sol-gel and chemical Co-precipitation method. XRD studies confirmed the single phase formation of PSMO by all three techniques. It was also found that the magnetotransport properties of PSMO strongly depended on the synthesis techniques. A substantial decrease in the insulator-metal transition temperature (TIM) and an enhancement in resistivity were observed in the samples synthesized through co-precipitation method as compared to solid state and sol-gel synthesized samples. Furthermore, a reduction in magnetization and a decrease in paramagnetic-ferromagnetic (PM-FM) transition temperatures (TC) were also noticed in co-precipitation method synthesized sample. In all three studied techniques, the sample synthesized by co-precipitation method exhibited the highest magnetoresistance (~63%). | Umesh Chand Kamlesh Yadav Anurag Gaur Varma G D | 2010 | Journal of Rare Earths2010，28，5： | 1 |
| 2 | Demonstration of synaptic and resistive switching characteristics in W/TiO_(2)/HfO_(2)/TaN memristor crossbar array for bioinspired neuromorphic computing显示文摘In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resistive switching(RS)characteristics for bioinspired neuromorphic computing.X-ray photoelectron spectroscopy(XPS)was employed to explore oxygen vacancy concentrations in bilayer TiO_(2)/HfO_(2)films.Gaussian fitting for O1s peaks confirmed that the HfO_(2)layer contained a larger number of oxygen vacancies than the TiO_(2)layer.In addition,HfO_(2)had lower Gibbs free energy(ΔG°=-1010.8 kJ/mol)than the TiO_(2)layer(ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO_(2)layer.XPS results andΔG°magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO_(2)layer.The W/TiO_(2)/HfO_(2)/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 10^(3) dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability(10^(4) s at 125℃)important for digital computing systems.Furthermore,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facilitation(PPF),and spike-timing-dependent plasticity(STDP,asymmetric Hebbian and asymmetric anti-Hebbian)were successfully mimicked herein using the crossbar-array memristive device.Based on experimental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS mechanism.This study demonstrates that the proposed W/TiO_(2)/HfO_(2)/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory(NVM)and bioinspired neuromorphic systems. | Muhammad Ismail Umesh Chand Chandreswar Mahata Jamel Nebhen Sungjun Kim | 2022 | Journal of Materials Science & Technology2022，，1： | 1 |
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