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24篇 您的检索式：作者名="Tansley L"

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	题名	作者	年代	出处	被引量
1	An instrumental solution to the phenomenon of negative capacitances in semiconductors 显示文摘	Butcher K S A Tansley T L Alexiev D	1996	Solid-state electron1996，39，：	1
2	Optical band gap of indium nitride显示文摘	TANSLEY T L FOLEY C P	1986	J Appl Phys1986，59，9：	1
3	A comparative study of photoenhanced wet chemical etching and relative ion etching of GaN epilayers grown on various substrates 显示文摘	KINDER B M TANSLEY T L	1998	Optoelectronic and Microelectronic Materials Devices1998，1，：	1
4	Pseudopotential band structure of indium nitride显示文摘	C P Foley	1986	Phys Rev B1986，33，2：	1
5	Regulatory change in YABBYlike transcription factor led to evolution of extreme fruit size during tomato domestication显示文摘	CONG B BARRERO L S TANSLEY S D	2008	Nature genetics2008，40，6：	1
6	Identificational of trait-improving quantitative trait loci alleles from a wild rice relative,Oryza rufipogon显示文摘	Xiao J Li J Grandillo S Ahn SN Yuna L Tansley SD McCouch SR	1998	Genetics1998，150，：	1
7	Expression of HLA antigens, beta 2-microglobulin and enzymes by human amniotic epithelial cells显示文摘	Adinolfi M Akle CA McColl I Fensom AH Tansley L Connolly P	1982	Nature1982，295，5847：	1
8	Point-defect energies in the nitridvs of aluminum, gallium, and indium 显示文摘	Tansley T L Egan R	1992	Phys Rev B1992，45，10：	1
9	Optical band gap of indium nitride显示文摘	TANSLEY T L FOLEY C P	1986	J Appl Phys1986，59，9：	1
10	Pseudopotential band structure of indium nitride显示文摘	TANSLEY T L FOLEY C P	1986	Physics Review B1986，33，2：	1
11	Point-defect energies in the nitrides ofaluminum,gallium,and indium显示文摘	Tansley T L Egan R J	1992	Phys Rev B1992，45，10：	1
12	Optical band gap of indium nitride显示文摘	Tansley T L Foley C P	1986	Journal of Applied Physics1986，59，9：	1
13	Polar Vibration Spectra of Interface Optical Phonons and Electron-interface Optical Phonon Interactions in a Wurtzite GaN-AIN Nanowire 显示文摘	ZHANG L SHI J J TANSLEY T L	1987	Phys Rev B1987，36，8：	1
14	Optical band gap of indium nitfide 显示文摘	Tansley T L Foley C P	1986	Journal of Applied Physics1986，59，9：	1
15	显示文摘	Zhang L Shi J J Tansley T L	2005	Phys Rev2005，，：	1
16	Optical and electri-cal properties of InN grown by radio - frequency reactivesputtering显示文摘	Motlan L Goldys E M Tansley T L	2002	Journal of Crystal Growth2002，241，12：	1
17	Electron mobility in indium nitride 显示文摘	Tansley T L Foley C P	1984	Electron Lett1984，20，：	1
18	Optical band gap of indium nirtide显示文摘	Tansley T L Foley C P	1986	Appl Phys Lett1986，80，9：	1
19	显示文摘	Tansley T L Egan R J	1992	Phys Rev B1992，85，10：	1
20	Electron mobilites in gallium, indium, and aluminum nitrides显示文摘	Chin V W L Tansley T L Osotchan T	1994	Appl Phys Lett1994，75，11：	1

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