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2篇 您的检索式：作者名="Shi Hanming"

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		题名	作者	年代	出处	被引量
	1	Challenges of 22 nm and beyond CMOS technology显示文摘It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate (HK/MG) stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.	HUANG Ru WU HanMing KANG JinFeng XIAO DeYuan SHI XueLong AN Xia TIAN Yu WANG RunSheng ZHANG LiangLiang ZHANG Xing WANG YangYuan	2009	Science in China(Series F)2009，52，9：	8
	2	A New Methodology for Designing a Curve-edge Twist Drill with an Arbitrarily Given Distribution of the Cutting Angles Along the Tool Cutting Edge显示文摘	Xiong Liangshan Fang Ning Shi Hanming	2009	Interna- tional Journal of Machine Tools & Manufacture2009，49，78：	1

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