| 2 | Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements显示文摘We report intrinsic photoconductivity studies on one of the least examined layered compounds,ZrS2.Few-atomic layer ZrS2 field-effect transistors were fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two-and four-terminal configurations under the illumination of 532 nm laser source.We measured photocurrent as a function of the incident optical power at several source-drain(bias)voltages.We observe a significantly large photoconductivity when measured in the multiterminal(four-terminal)configuration compared to that in the two-terminal configuration.For an incident optical power of 90 nW,the estimated photosensitivity and the external quantum efficiency(EQE)measured in two-terminal configuration are 0.5 A/W and 120%,respectively,under a bias voltage of 650 mV.Under the same conditions,the four-terminal measurements result in much higher values for both the photoresponsivity(R)and EQE to 6 A/W and 1400%,respectively.This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface,which greatly impacts the carrier mobility of low conducting materials.This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications. | Rukshan M.Tanthirige Carlos Garcia Saikat Ghosh Frederick Jackson II Jawnaye Nash Daniel Rosenmann Ralu Divan Liliana Stan Anirudha V.Sumant Stephen A.McGill Paresh C.ay Nihar R.Pradhan | 2019 | Semiconductor Science and Information Devices2019，1，2： | 0 |
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