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您的检索式：作者名="P.R.Tripathy"
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| 1 | Si/Si C-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis显示文摘A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal Si C-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/Si C-based hetero-structure devices. Under small-voltage modulation( 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance(5 106S/m2/,susceptance(10.4 107S/m2/, average breakdown voltage(207.6 V), and power generating efficiency(15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude(50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal(> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and Si C. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/Si C-based IMPATT for possible application in high-power MM-wave communication systems. | Moumita Mukherjee P.R.Tripathy S.P.Pati | 2015 | Journal of Semiconductors2015，36，6： | 3 |
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