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23篇 您的检索式:作者名="Osinski M"
    题名 作者 年代 出处 被引量
1Singlequantum well InGaN green light emitting diode degradation under high electrical stress显示文摘BARTON D L OSINSKI M PERLIN P 1999Microelectronics Reliability1999,39,8:1
2Avalanche breakdown and breakdown luminescence in pn-n GaN diodes显示文摘A Osinsky M S Shur R Gaska 1998Electronic Letters1998,34,:1
3GDNF is abundant in the adult rat gut显示文摘PETERS R J OSINSKI M A HONGO J A 1998Journal of the Autonomic Nervous System1998,70,12:1
4Efects of high electrical stress on GaN/InGaN /AlGaN single-quantum-well light-emitting diodes显示文摘OSINSKI M BARTON DL PERLIN P 1998J of Crystal Growth1998,,:1
5AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress显示文摘OSINSKI M ZELLER J BARTON D L 1996Appl Phys Lett1996,69,7:1
6Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes显示文摘Perlin P Osinski M Eliseev P G 1996Applied PhysicsLetter1996,69,:1
7Single- quantum well In-GaN green light emitting diodes degradation under high electrical stress 显示文摘BARTON D L OSINSKI M PERLIN P 1999Microelectronics and Reliability1999,39,8:1
8Orphanin FQ/nociceptin:a novel neuromodulator of gastrointestinal function显示文摘 BROWN D R 2000Peptides2000,21,7:1
9Single- quantum well InGaN green light emitting diode degrada- tion under high electrical stress 显示文摘BARTON D L OSINSKI M PERLIN P 1999Microelectronics Reliability1999,39,8:1
10Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures显示文摘Osinski M Svimonishvili T Smolyakov G A 2001IEEE Photon Technol Lett2001,13,7:1
11Cloning,expression and functional role of a noceceptin/orphanin FQ receptor in the porcine gastrointestinal tract显示文摘Osinski M A Pampusch M S Murtaugh M P 1999Eur J Pharmacol1999,365,23:1
12Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures显示文摘Osinski M Svimonishvili T Smolyakov G A 2001IEEE Photonics Technology Letters2001,7,13:1
13Low - temperature study of current and electroluminescence in InGaN/Al-GaN/GaN double - heterostructure blue light - emitting diodes显示文摘Perlin P Osinski M Eliseev P G 1996Appl Phys Lett1996,69,12:1
14Single- quantum well InGaN green light emitting diode degradtion under high electrical stress显示文摘BARTON D L OSINSKI M PERLIN P 1999Microeletronics Reliability1999,39,8:1
15查看详情显示文摘Osinski M Zeller J Chiu P C 0,,7:1
16Low-temperature study of current and electroluminescence in InGaN/AIGaN/ GaN double-heterostructure blue light-emitting diodes 显示文摘PERLIN P OSINSKI M ELISEEV P G 1996APL1996,69,12:1
17MgZnO/AlGaN heterostructure light-emitting diodes显示文摘Osinsky A Dong J W Kauser M Z 0,,19:1
18Application of nonlinear optimization methods to input shaping of the hoist drive of an off-shore crane 显示文摘Osinski M Wojciech S 1998Nonlinear Dynamics1998,17,:1
19Linewidth Broadening Factor in Semiconductor Lasers-An Overview显示文摘Osinski M J Buus 1987IEEE J Quantum Electron1987,23,1:1
20Single- quantum well InGaN green light emitting diodes under high electrical stress显示文摘BARTON D L OSINSKI M PERLIN P 1999Microelectronics and Reliability1999,39,8:1
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