维普期刊资源整合服务平台（V6.5）

23篇 您的检索式：作者名="NAST O"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	显示文摘	Nast O Puzzer T Koschier L M	1998	Appl Phys Lett1998，73，：	1
2	Aluminum-induced crystallization of silicon on glass for thin-film solar cells显示文摘	Nast O Brehme S Pritchard S	2001	Solar Energy Materials & Solar Cells2001，65，：	1
3	Influence of Interface and Al Structure on Layer Exchange During Aluminum-Induced Crystallization of Amorphous Silicon 显示文摘	Nast O Hartmann A J	2000	Journal of Applied Physics2000，88，：	1
4	CCK1 and CCK2 receptors are expressed on pancreatic stellate cells and induce collagen production 显示文摘	Berna MJ Seiz O Nast JF	2010	J Biol Chem2010，285，38：	1
5	Polycry- stalline silicon thin films on glass by aluminum-induced crys- tallization 显示文摘	NAST O BREHME S NEUHAUS D H	1999	IEEE Transactions on Electron Devices1999，46，10：	1
6	Influence of interface and A1 structure on layer exchange during aluminium-indueed crystallization of amorphous silicon显示文摘	Nast O Hartmann A J	2000	J Appl Phys2000，88，2：	1
7	Polycrystalline Silicon Thin Films on Glass by Aluminum-Induced Crystallization显示文摘	Nast O Brehme S Neuhaus D H	1999	IEEE Transaction on Electron Devices1999，46，10：	1
8	Predicting lower third molar eruption on panoramic radiographs after cephalometric comparison of profile and panoramic radiographs显示文摘	Begtrup A á Gr(o)nast(o)(o) H(A) Christensen IJ		0，，04：	1
9	Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature 显示文摘	Nast O Puzzer T Koschier L M	1998	Appl Phys Lett1998，73，22：	1
10	显示文摘	Nast O Wenham S R	2000	Journal of Applied Physics2000，88，：	1
11	Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization显示文摘	Nast O Wenham S R	2000	J Appl Phys2000，88，1：	1
12	Influence of interface and A1 structure on layer exchange during aluminum-induced crystallization of amorphous silicon 显示文摘	Nast O Hartmann A J	2000	J Appl Phys2000，88，2：	1
13	查看详情显示文摘	Nast O Puzzer T Koschier L M		0，，22：	1
14	Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminuminduced crystallization 显示文摘	Nast O Wenham S R	2000	Journal of Applied Physics2000，88，1：	1
15	Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon显示文摘	Nast O Hartmann A J	2000	Journal of Applied Physics2000，88，2：	1
16	显示文摘	Nast O Brehme S Neuhaus D H	1999	IEEE Transactions on Electron Devices1999，46，10：	1
17	显示文摘	Nast O Wenham S R	2000	J Appl Phys2000，88，：	1
18	Influence of Interface and Al Structure on Layer Exchange During Aluminum-induced Crystallization of Amorphous Silicon显示文摘	Nast O Hartmann A J	2000	Journal of Applied Physics2000，88，2：	1
19	Polycrystalline Silicon Thin Films on Glass by Aluminum-induced Crystallization显示文摘	Nast O Brehme S Neuhaus D H	1999	IEEE Transactions on Electron Devices1999，46，10：	1
20	显示文摘	Nast O Hartmann A J	2000	J Appl Phys2000，88，：	1

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示