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5篇 您的检索式:作者名="Mituru"
    题名 作者 年代 出处 被引量
1Damage of railway tunnel due to the Mid Niigata prefecture earthquake显示文摘Mituru S Shiro S Takashi S 0,,05:1
2Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)显示文摘NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.Hong Qiu, Mituru Hashimoto ( Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, Beijing 100083, China Applied Science School, University of Science and Technology Beijing, Beijing 100083, China Department of Applied Phys 2000International Journal of Minerals,Metallurgy and Materials2000,14,3:1
3Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001)显示文摘Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 mA in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of-135℃ to 0 ℃. The Cu film is pol- ycrystalline at Vs= 0 V while it epitaxially grows with Cu(00 )|| MgO(00 1) and Cu[0 10] || MgO[010] at Vs,=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.Hong Qiu, Yue Tian, Mituru Hashimoto Applied Science School, University of Science and Technology Beijing, Beijing 100083, China Beijing Keda-Tianyu Microelectronic Material Technology Development Corporation, 30 Xueyuanlu, Haidian District, Beijing 10008 2001Journal of University of Science and Technology Beijing2001,8,3:1
4Nucleotide sequence of small ColE1 derivatives: Structure of the regions essential for autonomous replication and colicin E1 immunity显示文摘Atsuhiro Oka Nobuo Nomura Masayuki Morita Hiroyuki Sugisaki Kazunori Sugimoto Mituru Takanami 1979MGG Molecular & General Genetics1979,,2:1
5Contributions of the Secondary Jet to the Tangential Velocity Distribution and to the Collection Efficiency of the Fixed Guide Vane Type Axial Flow Cyclone Dust Collector显示文摘In order to control the maximum tangential velocity V?m(m/s)of the turbulent rotational air flow and the collection efficiencyηc(%)using the fly ash of the mean diameter X R50=5.57?m,two secondary jet nozzles were installed to the body of the axial flow cyclone dust collector with the body diameter D1=99mm.Then in order to estimate V?m(m/s),the conservation theory of the angular momentum flux with Ogawa combined vortex model was applied.The comparisons of the estimated results of V?m(m/s)with the measured results by the cylindrical Pitot-tube were shown in good agreement.And also the estimated collection efficienciesηcth(%)basing upon the cut-size Xc(?m)which was calculated by using the estimated V?m(m/s)and also the particle size distribution R(Xp)were shown a little higher values than the experimental results due to the re-entrainment of the collected dust.The best method for adjustment ofηc(%)related to the contribution of the secondary jet flow is principally to apply the centrifugal effect?c(1).Above stated results are described in detail.Akira Ogawa Hideki Anzou So Yamamoto Mituru Shimagaki 2015Journal of Thermal Science2015,24,6:0
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