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您的检索式：作者名="MENGXiangti"
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| 1 | Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT显示文摘The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) andSi bipolar junction transistor (BJT) was studied as a fumction of reactor fast neutron radiation fluence. After neutron irradia-tion, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. Thehigher the neuron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as wellas β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiationthreshold and better anti-radiation perrormance than Si BJT. The mechanism of performance changes induced by irradiationwas preliminarily discussed. | MENGXiangti WANGRuipian KANGAiguo WANGJilin JIAHongyong CHENPe | 2003 | Rare Metals2003，22，1： | 4 |
| 2 | Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT显示文摘The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gainβ decreases with increasing dose; increase of Ib - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT;β increases with Vbe or Ib, but decreases at Ib < 0.25 mA with Ib, and congregates at higher dose; and a damage factor d(β) is much less at the same dose for SiGe HBT than for Si BJT. SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic - Ic0,Ib - Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed. | MENGXiangti ZHANGXimin WANGJilin HUANGWentiao CHENPeiyi KLAHongyong | 2004 | Rare Metals2004，23，4： | 0 |
| 3 | Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors显示文摘Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those from the γ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviously and a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightness increases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy, showing the sensor undergoes severe performance degradation. Electron radiation damage is much more severe than γ radiation damage for the CMOS image sensors. A possible explanation is presented in this paper. | MENGXiangti KANGAiguo ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu | 2004 | Rare Metals2004，23，2： | 0 |
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