维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

1篇 您的检索式：作者名="MEIJING NING"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Boosting electroluminescence performance of all solution processed In P based quantum dot light emitting diodes using bilayered inorganic hole injection layers显示文摘The development of high-performance In P-based quantum dot light-emitting diodes(QLEDs)has become the current trend in ecofriendly display and lighting technology.However,compared with Cd-based QLEDs that have already been devoted to industry,the efficiency and stability of In P-based QLEDs still face great challenges.In this work,colloidal Ni Oxand Mg-doped Ni Oxnanocrystals were used to prepare a bilayered hole injection layer(HIL)to replace the classical polystyrene sulfonate(PEDOT:PSS)HIL to construct high-performance In Pbased QLEDs.Compared with QLEDs with a single HIL of PEDOT:PSS,the bilayered HIL enables the external quantum efficiencies of the QLEDs to increase from 7.6%to 11.2%,and the T_(95)lifetime(time that the device brightness decreases to 95%of its initial value)under a high brightness of 1000 cd m^(-2)to prolong about 7 times.The improved performance of QLEDs is attributed to the bilayered HIL reducing the mismatched potential barrier of hole injection,narrows the potential barrier difference of indium tin oxide(ITO)/hole transport layer interface to promote carrier balance injection,and realizes high-efficiency radiative recombination.The experimental results indicate that the use of bilayered HILs with p-type Ni Oxmight be an efficient method for fabricating high-performance In P-based QLEDs.	QIUYAN LI SHENG CAO PENG YU MEIJING NING KE XING ZHENTAO DU BINGSUO ZOU JIALONG ZHAO	2022	Photonics Research2022，10，9：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费