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3篇 您的检索式：作者名="M.C.E.Yagoub"

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		题名	作者	年代	出处	被引量
	1	Neural-based dynamic modeling of nonlinear microwave circuits显示文摘	J.Xu M.C.E.Yagoub R.Ding		0，，12：	1
	2	2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps显示文摘In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.	A.Hezabra N.A.Abdeslam N.Sengouga M.C.E.Yagoub	2019	Journal of Semiconductors2019，40，2：	1
	3	S-band low noise amplifier using 1μm InGaAs/InAlAs/InP pHEMT显示文摘This paper discusses the design of a wideband low noise amplifier(LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications.The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT.Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz.A common-drain in cascade with a common source inductive degeneration,broadband LNA topology is proposed for wideband applications.The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss(S_(11)<—10 dB,S_(22)<—11 dB).This LNA exhibits an input 1-dB compression point of-18 dBm,a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.	Z.Hamaizia N.Sengouga M.C.E.Yagoub M.Missous	2012	Journal of Semiconductors2012，33，2：	0

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