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20篇 您的检索式：作者名="KAPER V"

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	题名	作者	年代	出处	被引量
1	Performance of the AlGaN HEMT structure with a gate extension 显示文摘	TOMPSON R P PRUNTY R KAPER V	2001	IEEE Transactions on Electron Devices2001，51，2：	1
2	Characterization of the locus of enterocyte effacement (LEE) in different enteropathogenic Escherichia coli (EPEC) and Shiga-toxin producing Eacherichia coli (STEC) serotypes显示文摘	Sperandio V Kaper JB Bortolini MR et a1	1998	FEMS Microbiol Lett1998，164，1：	1
3	Characterization of the locus of entercoty effacement (LEE) in different enteropathogenic Escherichia coli (EPEC) and Shiga-toxin producing Escherichia coli (STEC) serotypes显示文摘	Sperandio V Kaper J B Bortolini M R	1998	FEMS Microbiol Letters1998，164，：	1
4	Performance of the AlGaN HEMT structure with a gate extension 显示文摘	THOMPSON R PRUNTY T KAPER V	2004	IEEE Tran Electron Devices2004，51，2：	1
5	Characterization of the locus of enterocyte effacement (LEE) in different enteropathogenic Escherichia coli and Shigatoxin producing Escherichia coli (STEC) serotypes显示文摘	Sperandio V Kaper J B Bortolini M R	1998	FEMS Microbiol Lett1998，164，：	1
6	Quorum sensing controls expression of the type Ⅲ secretion gene transcription and protein secretion in enterohorrhagic and enteropathogenic Escherichia coli显示文摘	Sperandio V Mellies JL Nguyen W Shin S Kaper JB		0，，26：	1
7	Influence of barrier thickness on the high-power performance of A1GaN/ GaN HEMTs显示文摘	Tilak V Green B Kaper V	2001	IEEE Electron Device Lett2001，22，11：	1
8	Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs 显示文摘	TILAK V GREEN B KAPER V	2001	IEEE EDL2001，22，11：	1
9	Bacterial cell-to-cell signaling in the gastrointestinal tract显示文摘	Kaper J B Sperandio V	2005	Infect Immun2005，73，6：	1
10	Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs显示文摘	TILAK V GREEN B KAPER V	2001	IEEE Electron Device Lett2001，22，11：	1
11	High-power monolithic AlGaN/GaN HEMT oscillator显示文摘	Kaper V S Tilak V Kim H	2003	IEEE Journal of Solidstate Circuits2003，38，9：	1
12	Signal generation,control,and frequency conversion AlGaN/GaN HEMT MMICs显示文摘	Kaper V S Thompson R M Prunty T R	2005	IEEE Transactions on Microwave Theory and Thchniques2005，53，1：	1
13	Rotational hysteresis of exchange-spring magnets显示文摘	JIANG J S BADER S D KAPER H LEAF G K SHULL R D SHAPIRO A J GORNAKOV V S NIKITENKO V I PLATT C L BERKOWITZ A E DAVID S FULLERTON E E	2002	J Phys D2002，35，19：	1
14	performance of the AIGaN HEMT structure with a gate extension显示文摘	TOMPSON R P PRUNTY R KAPER V	2001	IEEE Transactions on Electron Devices2001，51，2：	1
15	Bacterial cell -to -cell signaling in the gastrointestinal tract显示文摘	KAPER J B SPERANDIO V	2005	Infect Immun2005，73，：	1
16	Influence of barrier thickness on the high-power performance of A1GaN/GaN HEMTs 显示文摘	TILAK V GREEN B KAPER V	2001	IEEE Electron Device Lett2001，22，11：	1
17	An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer显示文摘	SHEALY J R KAPER V TILAK V	2002	J Phys2002，14，：	1
18	Bacterial cell-to-cell signaling in the gastrointestinal tract显示文摘	KAPER J B SPERANDIO V	2005	Infection Immunity2005，73，6：	1
19	Progress in high-power,high frequency AlGaN/GaN HEMTs显示文摘	EASTMAN L F TILAK V KAPER V	2002	Phy SSC2002，，1：	1
20	Performance of the AlGaN HEMT structure with a gate extension显示文摘	Prunty T Kaper V	2004	IEEE Electron Devices2004，51，2：	1

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