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| 1 | Low-cost fluofimetric determination of radicals based on fluorogenic dimerization of the natural phenol sesamol显示文摘 | Y.Makino S.Uchiyama K.Ohno | | 0，，4： | 1 |
| 2 | Electronic Structure and Electron-transport Properties of Peanut-shaped C_(60) Polymers with a Negative Gauss Curvature显示文摘1 Results When a C60 film was irradiated with electron-beam (EB) with an incident energy of 3 kV, a peanut-shaped C60 polymer with metallic properties was formed[1], as shown in Fig.1. To elucidate the origin of the metallic properties of the peanut-shaped polymer, we examined the valence photoelectron spectra of the polymer using in situ high-resolution photoelectron spectroscopy and found that the electronic states of the polymer came across the Fermi level (EF)[2]. Interestingly, the spectral shape i... | J.Onoe Y.Ochiai T.Ito S.Kimura S.Ueda Y.Noguchi S.Ishii K.Ohno Y.Toda | 2007 | 复旦学报(自然科学版)2007，46，5： | 0 |
| 3 | Coulomb expansion of a van der Waals C_(60) solid film显示文摘Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth. | 薛其坤 厉建龙 孙牧 陆华 T.Hashizume Y.Hasegawa K.Ohno Y.Kawazoe T.Sakurai H.Kamiyama H.Shinohara | 2000 | Science China Mathematics2000，43，11： | 0 |
| 4 | 固态vander WaalsC _(60)膜晶格的Coulomb膨胀显示文摘利用扫描隧道显微镜观测到生长在GaAs(0 0 1 ) 2× 4表面上的固态vanderWaalsC6 0 膜在室温下较之C6 0 晶体具有 1 3%的晶格膨胀 .这种膨胀是由从GaAs衬底饱和的As悬挂键上转移到C6 0 分子上的电荷之间的Coulomb作用引起的 .理论计算表明 ,平均约有 1 76个电子转移到每个C6 0 分子上 .有趣的是 ,该固态C6 0 膜为 (1 1 0 )取向 ,这明显不同于生长于其他半导体或金属表面上的具有 (1 1 1 )取向的六角密排C6 0 膜 .这种反常取向的薄膜是由GaAs衬底的各向异性产生的一维限制作用导致的 .通过选择不同的衬底 ,可以控制C6 0 | 薛其坤 厉建龙 孙牧 陆华 T.Hashizume Y.Ling Y.Hasegawa K.Ohno Z.Q.Li Y.Kawazoe T.Sakurai H.Kamiyama H.Shinohara | 2000 | 中国科学(A辑)2000，30，6： | 0 |
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