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3篇 您的检索式:作者名="JOHN EBOWERS"
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1Widely tunable,heterogeneously integrated quantum-dot O-band lasers on silicon显示文摘Heterogeneously integrated lasers in the O-band are a key component in realizring low-power optical interconnects for data centers and high-performance computing.Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds,small linewidth enhancement factor,and low sensitivity to reflections.Here,we present widely tunable quantum-dot lasers heterogencously integrated on silicon-on-insulator substrate.The tuning mechanism is based on Vernier dual-ring geometry,and a 47nm tuning range with 52 dB side-mode suppression ratio is observed.These parameters show an increase to 52nm and 58 dB,respectively,when an additional wavelength filter in the form of a Mach-Zehnder interferometer is added to the cavity.The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.ADITYA MALIK JOEL GUO MINH A.TRAN GEZA KURCZVEIL DI LIAN JOHN EBOWERS 2020Photonics Research2020,8,10:4
2Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch显示文摘This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.BOZHANG DONG JIANAN DUAN HEMING HUANG JUSTIN CNORMAN KENICHI NISHI KEIZO TAKEMASA MITSURU SUGAWARA JOHN EBOWERS FRéDéRIC GRILLOT 2021Photonics Research2021,9,8:1
3Integrated dispersion compensated mode-locked quantum dot laser显示文摘Quantum dot lasers are excellent on-chip light sources,offering high defect tolerance,low threshold,low temperature variation,and high feedback insensitivity.Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits.We present here,for the first time to our knowledge,a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures.This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si.As an illustration of the potential of this platform,we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror.Due to the dispersion compensation effect of the waveguide mirror,the pulse width of the mode-locked laser is reduced by a factor of 2.8.ZEYU ZHANG JUSTIN CNORMAN SONGTAO LIU ADITYA MALIK AND JOHN EBOWERS 2020Photonics Research2020,8,9:0
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