|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | 自动沙拉机的兴起显示文摘Sweetgreen是一个充满小资情调的沙拉连锁品牌,其联合创始人兼首席品牌官纳撒尼尔·茹(Nathaniel Ru)站在即将开业的一家门店里,说道:“我们一直尽量对这个东西保持低调,因为它还没有得到证明,我们不想做出任何承诺。”他指的是耸立在柜台后面的一架不锈钢玻璃装置,它和20世纪60年代的计算机主机差不多大小。这台设备名叫InfiniteKitchen,它的工作是装配数百份大丰收碗(harvest bowl)、羽衣甘蓝凯撒沙拉(kale Caesars)以及这家餐厅每天都会出产的许多其他精美沙拉组合。 | ELIZABETH G.DUNN EVAN JENKINS(摄影) | 2023 | 商业周刊(中文版)2023，，10： | 0 |
| 2 | 猴年快乐干杯显示文摘人生苦短。别浪费在那些糟糕的香槟上。尤其是在逢年过节的时候。 | lizabeth G.Dunn | 2016 | 商业周刊(中文版)2016，，3： | 0 |
| 3 | 以涓滴之力灌溉显示文摘在干旱的美国亚利桑那州西翼,科罗拉多河流域与莫哈韦沙漠的交界地带,种植着约4450公顷的苜蓿、高粱、小麦和苏丹草,这些作物属于科罗拉多河印第安部落(CRIT),收获之后将作为动物饲料出售。要想在这里种植任何东西,灌溉是必须的。据代表部落管理农场的乔什•摩尔(Josh Moore)说,今年到目前为止,只下了不到6.3毫米的雨。 | Elizabeth G.Dunn Molly Peters(摄影) 王湛(译) | 2021 | 商业周刊(中文版)2021，，19： | 0 |
| 4 | Hot electron effects on the operation of potential well barrier diodes显示文摘A study has just been carried out on hot electron effects in GaAs/Al0.3Ga0.7As potential well barrier(PWB)diodes using both Monte Carlo(MC)and drift-diffusion(DD)models of charge transport.We show the operation and behaviour of the diode in terms of electric field,mean electron velocity and potential,mean energy of electrons andΓ-valley population.The MC model predicts lower currents flowing through the diode due to back scattering at anode(collector)and carrier heating at higher bias.At a bias of 1.0 V,the current density obtained from experimental result,MC and DD simulation models are 1.35,1.12 and1.77μA/μm^2 respectively.The reduction in current over conventional model,is compensated to a certain extent because less charge settles in the potential well and so the barrier is slightly reduced.The DD model results in higher currents under the same bias and conditions.However,at very low bias specifically,up to 0.3 V without any carrier heating effects,the DD and MC models look pretty similar as experimental results.The significant differences observed in the I-V characteristics of the DD and MC models at higher biases confirm the importance of energy transport when considering these devices. | M.Akura G.Dunn M.Missous | 2019 | Journal of Semiconductors2019，40，12： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员