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您的检索式：作者名="F.Levesque"
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| 1 | 高能Pb离子辐照注碳SiO_2的红外谱研究显示文摘室温下,先用120keV的C离子注入二氧化硅薄膜样品至剂量2.0×1017,5.0×1017或8.6×1017ions/cm2,再用950MeV的Pb离子分别辐照至剂量5.0×1011,1.0×1012或3.8×1012ions/cm2,然后测量样品的傅里叶变换红外(FTIR)光谱.通过分析测量得到的傅里叶变换红外谱,发现Pb离子辐照在注碳SiO2样品中可引起大量的Si—C和Si(C)—O—C等化学键的形成,大剂量Pb离子辐照可在大剂量注碳的SiO2中产生分子CO2.大量的Si—C键的存在和分子CO2的形成,预示着高能Pb离子辐照在注碳SiO2样品中有可能形成了纳米Si团簇和/或SiC晶粒. | 赵志明 王志光 A.Benyagoub M.Toulemonde F.Levesque 宋银 金运范 孙友梅 | 2005 | 高能物理与核物理2005，29，8： | 4 |
| 2 | Evidence of New Structure Formation in C-doped SiO_2 after 4.57 MeV/u Pb Ion Irradiation显示文摘Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations | WangZhiguang ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei A.Benyagoub M.Toulemonde F.Levesque H.Takahashi T.Shibayama N.Sakagushi | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
| 3 | FTIR Study of C-doped SiO_2 Films Irradiated by 4.57 MeV/u Pb Ions显示文摘The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。 | ZhaoZhiming SongYin WangZhiguang JinYunfan A.Benyagoub M.Toulemonde F.Levesque | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
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