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28篇 您的检索式:作者名="DEVINE R A B"
    题名 作者 年代 出处 被引量
1显示文摘Hutson J M Devine R A B 2004J Appl Phys2004,95,:1
2Ion implantation-and radiation-induced structural modifications in amorphous SiO2显示文摘Devine R A B 1993J Non-Cryst Solids1993,152,:1
3Tantalum Pentoxide ( Ta2 05 ) Thin Films for Advanced Dielectric Applications 显示文摘Chaneliero C Autran J L Devine R A B 1998Materials Science and Engineering1998,22,:1
4Tantalum pentoxide(Ta2Os) thin films for advanced dielectric applications显示文摘CHANELIERE C AUTRAN J L DEVINE R A B BALLAND B 1998Materials Science and Engineering R1998,22,:1
5Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO3 显示文摘Busani T Devine R A B 2004J Appl Phys2004,96,:1
6Tantalum Pentoxide (Ta200 Thin Films for Advanced Dielectric Applications 显示文摘Chaneliere C Autran J L Devine R A B 1998Materials Science and Engineering1998,22,:1
7Dielectric and infrared properties of TiO2 films containing anatse and rutile显示文摘BUSANI T DEVINE R A B 2005Semiconduct Semiconduct Sei Technol2005,20,8:1
8显示文摘Chaneliere C Autran J L Devine R A B 1998Mater Sci Eng R1998,22,:1
9Dielectric and infrared properties of TiO2 films containing anatase and rutite 显示文摘Busani T Devine R A B 2005Semicond Sci Technol2005,20,:1
10Analysis of the vibrational mode spectra of amorphous SiO2films显示文摘MARTINET C DEVINE R A B 1995J Appl Phys1995,77,9:1
11Nondestructive measurement of interfacialSiO2 films formed during deposition and annealing of Ta2O5 显示文摘DEVINE R A B 1996Applied Physics Letters1996,68,14:1
12Structural nature of the Si/SiO2 interface through infrared spectroscopy显示文摘Devine R A B 1996Applied Physics Letters1996,68,22:1
13Comparison of experimental andcalculated TO and LO oxygen vibrational modes in thin Si02films 显示文摘Martinet C Devin R A B 1995Journal of Non - Crystalline Solids1995,187,:1
14Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures 显示文摘DEVINE R A B WARREN W L XU J B 1995Applied Physics Letter1995,77,1:1
15Posttraumatic growth in young adults who experienced serious childhood illness: a mixed-methods approaeh显示文摘Devine K A Reed Knight B Loiselle K A Fenton N Blount R L 2010J Clin Psychol Med Settings2010,17,:1
16Radiationinduced charge trapping in low-k silsesquioxane-based intermetal dielectric films显示文摘Devine R A B Tringe J W Chavez J R 2002IEEE T NUCL SCI 20022002,,:1
17Ion implantation-and radiation-induced structural modifications in amorphous SiO2显示文摘DEVINE R A B 1993J Non-Cryst Solids1993,152,:1
18Tantalum pentoxide (Ta2Os) thin fi ms for advanced die eetr c app icat ons 显示文摘CHANELIERE C AUTRAN J L DEVINE R A B 1998Mater Sci Eng1998,22,6:1
19Structural nature of the SilSi02 interface through infrared spectroscopy显示文摘DEVINE R A B 1996Applied Physics Letters1996,68,22:1
20Analysis of the vibrational mode spectra of amorphous Si02 films显示文摘MARTINET C DEVINE R A B 1995Journal of Applied Physics1995,77,9:1
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