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您的检索式：作者名="Chengzhan LI"
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| 1 | High performance 1 mm AlGaN/GaN HEMT based on SiC substrate显示文摘This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor(HEMT)which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.Metal-organic chemical vapor deposition(MOCVD)was used to generate the epitaxy layers.Corresponding experiments show that the device has a gate length of 0.8 mm exhibiting drain current density of 1.16 A/mm,transconductance of 241 ms/mm,a gate-drain break-down voltage larger than 80 V,maximum current gain frequency of 20 GHz and maximum power gain frequency of 28 GHz.In addition,the power gain under the continues wave condition is 14.2 dB with a power density of 4.1 W/mm,while under the pulsed wave condition,power gain reaches 14.4 dB with power density at 5.2 W/mm.Furthermore,the two-port network impedance characteristics display great potential in microwave application. | Weijun LUO Xiaojuan CHEN Chengzhan LI Xinyu LIU Zhijing HE Ke WEI Xiaoxin LIANG Xiaoliang WANG | 2008 | Frontiers of Electrical and Electronic Engineering in China2008，3，1： | 1 |
| 2 | Multi-Dimensional Models of SiC Power MOSFET for Accurately Predicting the Characteristics显示文摘The paper presents a compact simulation program with integrated circuit emphasis(SPICE)model for a 1200V/19A Silicon Carbide power metallic oxide semiconductor field effect transistor(MOSFET).Based on an equivalent circuit topology,the model completely describes the static and dynamic device characteristics which include the MOSFET channel current,the nonlinear junction capacitance and the switching behavior.Especially the parasitic elements effect is also considered and studied during the modeling,testing and simulation.The model parameters are extracted based on the experimental measurement data.For convenience,the model is implemented by Verilog-A description language and embedded in the simulation software-Advanced Design System(ADS).The validity and accuracy of the model are validated by the double pulse test under inductor load.The Verification result shows that the modeling job is correct and available for prediction of the switching performance under different conditions. | Shen Diao Hong Chen Yanhu Chen Yun Bai Chengyue Yang Xinyu Liu Chengzhan Li Zhengdong Zhou | 2017 | CES Transactions on Electrical Machines and Systems2017，1，3： | 0 |
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