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5篇 您的检索式:作者名="Chenglin Du"
    题名 作者 年代 出处 被引量
1Recent Advances in Constructing Interfacial Active Catalysts Based on Layered Double Hydroxides and Their Catalytic Mechanisms显示文摘The interaction between the metal and the support of supported metal catalysts, which are widely used in industry, is the primary focus of the study of such catalysts. With the developing understanding of the metal–support interaction, the intrinsic factor that influences the catalytic performance has been determined to be the structure of interfacial sites. Layered double hydroxides(LDHs, a class of two-dimensional layered anion clay) possess several unique characteristics, such as the following:(1) tunable elemental component, homogeneous distribution of metal cations.(2) anchoring eff ect.(3) multiple layered structure for exfoliation or intercalation and special memory eff ect;and(4) internal/external confinement eff ects during topological transformation. Taking LDHs and their derivatives as precursors or supports shows superior advantages in designing interfacial active catalysts with tunable properties. Therefore, this review is mainly focused on constructing interfacial active catalysts by LDHs and revealing the interfacial eff ects(including electronic, geometric, and bifunctional eff ects) on the catalytic performance that will provide new perspectives and approaches for the development of heterogeneous catalysis.Haoxuan Du Jiaxuan Fan Chenglin Miao Mingyu Gao Yanan Liu Dianqing Li Junting Feng 2021Transactions of Tianjin University2021,27,1:1
2Effect of carbon addition on the Pt-Sn/γ-A1203 catalyst for long chain paraffin dehydrogenation to olefin 显示文摘He Songbo Sun Chenglin Du Hongzhang 2008Chemical Engineering Journal2008,141,13:1
3A review on GaN HEMTs:nonlinear mechanisms and improvement methods显示文摘The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system design.However,the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance,transconductance,channel transconductance etc.Among them,the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect,the increasing resistance of access region,the self-heating effect and the trapping effects.Based on the mechanisms,device-level improvement methods of transconductance including the trapping suppression,the nanowire channel,the graded channel,the double channel,the transconductance compensation and the new material structures have been proposed recently.The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi 2023Journal of Semiconductors2023,44,12:0
4Recyclable thermally conductive poly(butylene adipate-co-terephthalate)composites prepared via forced infiltration显示文摘With the rapid development of electronic equipment and communication technology,the demand for polymer composites with high thermal conductivity and mechanical properties has increased significantly.However,its nondegradable polymer matrix will inevitably bring more and more serious environmental pollution.Therefore,it is urgent to develop biodegradable thermally conductive polymer composites.In this work,biodegradable poly(butylene adipate-coterephthalate)(PBAT)is used as the matrix material,and vacuum-assisted filtration technology is employed to prepare carbon nanotube(CNT)and cellulose nanocrystal(CNC)networks with high thermal conductivity.Then CNT-CNC/PBAT composites with high thermal conductivity and excellent mechanical properties are prepared by the ultrasonic-assisted forced infiltration method.Both experiment and simulation methods are used to systematically investigate the thermally conductive and dissipation performances of the CNT-CNC/PBAT composites.Above all,a simple alcoholysis reaction is applied to realize the separation of the PBAT matrix and functional fillers without destroying the conductive network skeleton,which makes it possible for the recycling of thermally conductive polymer composites.Chenglin Li Yi Han Qingyuan Du Daming Wu Jingyao Sun Zhao Wang Liqun Zhang 2023SusMat2023,3,3:0
5Recent progress of physical failure analysis of GaN HEMTs显示文摘Gallium nitride(GaN)-based high-electron mobility transistors(HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.Xiaolong Cai Chenglin Du Zixuan Sun Ran Ye Haijun Liu Yu Zhang Xiangyang Duan and Hai Lu 2021Journal of Semiconductors2021,42,5:0
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