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您的检索式：作者名="Cheng Shide"
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| 1 | Effect of various salt-alkaline mixedstresses conditions on sunflower seedlings and analysis of theirstress factors显示文摘 | Cheng Shide Sheng Yanmin | 2005 | Environ Exp Bot2005，54，： | 1 |
| 2 | AtomGAN:unsupervised deep learning for fast and accurate defect detection of 2D materials at the atomic scale显示文摘The extraction of atomic-level material features from electron microscope images is crucial for studying structure-property relationships and discovering new materials.However,traditional electron microscope analyses rely on time-consuming and complex human operations;thus,they are only applicable to images with a small number of atoms.In addition,the analysis results vary due to observers’individual deviations.Although efforts to introduce automated methods have been performed previously,many of these methods lack sufficient labeled data or require various conditions in the detection process that can only be applied to the target material.Thus,in this study,we developed AtomGAN,which is a robust,unsupervised learning method,that segments defects in classical 2D material systems and the heterostructures of MoS_(2)/WS_(2)automatically.To solve the data scarcity problem,the proposed model is trained on unpaired simulated data that contain point and line defects for MoS_(2)/WS_(2).The proposed AtomGAN was evaluated on both simulated and real electron microscope images.The results demonstrate that the segmented point defects and line defects are presented perfectly in the resulting figures,with a measurement precision of 96.9%.In addition,the cycled structure of AtomGAN can quickly generate a large number of simulated electron microscope images. | Danpeng CHENG Wuxin SHA Zuo XU Shide LI Zhigao YIN Yuling LANG Shun TANG Yuan-Cheng CAO | 2023 | Science China(Information Sciences)2023，66，6： | 0 |
| 3 | Designing interstitial boron-doped tunnel-type vanadium dioxide cathode for enhancing zinc ion storage capability显示文摘Chemical doping is a powerful method to intrinsically tailor the electrochemical properties of electrode materials.Here,an interstitial boron-doped tunnel-type VO_(2)(B)is constructed via a facile hydrothermal method.Various analysis techniques demonstrate that boron resides in the interstitial site of VO_(2)(B)and such interstitial doping can boost the zinc storage kinetics and structural stability of VO_(2)(B)cathode during cycling.Interestingly,we found that the boron doping level has a saturation limit peculiarity as proved by the quantitative analysis.Notably,the 2 at.%boron-doped VO_(2)(B)shows enhanced zinc ion storage performance with a high storage capacity of 281.7 mAh g^(-1) at 0.1 A g^(-1),excellent rate performance of 142.2 mAh g^(-1) at 20 A g^(-1),and long cycle stability up to 1000 cycles with the capacity retention of 133.3 mAh g^(-1) at 5 A g^(-1).Additionally,the successful preparation of the boron-doped tunneltype α-MnO_(2) further indicates that the interstitial boron doping approach is a general strategy,which supplies a new chance to design other types of functional electrode materials for multivalence batteries. | Shiwen Wang Hang Zhang Kang Zhao Wenqing Liu Nairui Luo Jianan Zhao Shide Wu Junwei Ding Shaoming Fang Fangyi Cheng | 2023 | Carbon Energy2023，5，8： | 0 |
| 4 | Formation Conditions of TiN Coatings by Reactive Magnetron Sputtering and Its Characteristics显示文摘The TiN coatings on the surfaces of various cemented carbides were performed by use of reactive magnetron sputtering.Thehighest microhardness which was obtained in our experiment was 49 GPa.The order of effect weights of deposition parameters isP_∑,β,Ts,...,which resulted from the LI6 experiments according to orthogonal design.The pole density analysis indicated thatthere were a few of the textureless samples.The crystal orientation of TiN exhibited clear regularity and affected microhardnessand other properties of films remarkably.A concept relating to structure factor was proposed.A layer-like structure was found.SAES showed that a transition layer exists between substrate and coating and its thickness is of the order of micron.The forma-tion mechanism of film was discussed. | Zhang, Xuehua Cheng, Shide Chen, Guanwu Wang, Donghui | 1989 | Rare Metals1989，9，4： | 0 |
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