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22篇 您的检索式:作者名="CARTIER E A"
    题名 作者 年代 出处 被引量
1Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics 显示文摘KERBER A CARTIER E PANTISANO L 2003IEEE EDL2003,24,2:1
2Passivation and interface state density of SiO/HfO-based/polycrystalline-Si gate stacks 显示文摘Carter R J Cartier E Kerber A 2003Applied Physics Letters2003,,:1
3The herpes simplex virus-1 Us3 protein kinase blocks CD8T cell lysis by preventing the cleavage of Bid by granzyme B 显示文摘Cartier A Broberg E Komai T 2003Cell Death Differ2003,10,12:1
4Determinants of potency on alpha-conotoxin MII,a peptide antagonist of neuronal nicotinic receptors显示文摘Everhart D Cartier G E Malhotra A 2004Biochemistry2004,43,10:1
5Single-residue al- teration in alpha-conotoxin PnlA switches its nAChR sub- type selectivity 显示文摘Luo S Nguyen T A Cartier G E 1999Biochem1999,38,14:1
6Ef- fective electron mobility in Si inversion layers in metal-oxide semiconductor systems with a high-k insulator: the role o{ re mote phonon scattering 显示文摘FISCHETTI M V NEUMAYER D A CARTIER E A 2001Journal of Applied Physics2001,90,9:1
7Single-residue alteration in α-conotoxin PnIA switches its nAChR subtype selec tivity显示文摘Luo S Nguyen T A Cartier G E 1999Biochemistry1999,38,14:1
8A pathologic cascade leading to synaptic dysfunction in alpha-synuclein-induced neurodegeneration显示文摘Scott D A Tabarean I Tang Y Cartier A Masliah E Roy S 2010J Neurosci2010,30,:1
9Effective electron mobility in Si inversion layers in metaloxide-semiconductor systems with a high-insulator:The role of remote phonon scattering显示文摘Fischetti M V Neumayer D A Cartier E A 2001J Appl Phys2001,90,9:1
10Effective electron mobility in Si inversion layers in metaloxide semiconductor systems with a high-k insulator:the role of remote phonon scattering 显示文摘FISCHETTI M V NEUMAYER D A CARTIER E A 2001J Appl Phys2001,90,3:1
11Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics 显示文摘Guha S Cartier E Gribelyuk M A 2000Appl Phys Lett2000,77,17:1
12Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films显示文摘Callegari A Cartier E Gribelyuk M 2001J Appl Phys2001,90,:1
13Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics显示文摘S Guha E Cartier M A Gribelyuk 0,,:1
14Physical and Electrical Characteristics of Hafnium Oxide and Hafnium Silicate Sputtered Films显示文摘Callegari A Cartier E Gribelyuk M 2001J Appl Phys2001,,90:1
15Origin of the threshold voltage instability in SiOdHtO2 dual layer gate dielectrics显示文摘KERBER A CARTIER E PANTISANO L 2003IEEE Eleetron Device Letters2003,24,2:1
16Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition显示文摘NEUMAYER D A CARTIER E 2001Journal of Applied Physics2001,90,4:1
17Physical and electrical characterization of hafnium oxide and hafnium silicate sputtered films显示文摘Callegari A Cartier E Gribelyuk M 2001J Appl Phys2001,90,:1
18Materials characterization of ZrO2 -SiO2 and HfO2 -SiO2 binary oxides deposited by chemical solution deposition 显示文摘Neumayer D A Cartier E 2001J Appi Phys2001,90,4:1
19Threshold voltage instabilities in high-k gate dielectric stacks 显示文摘Zafar S Kumar A Gusev E Cartier E 2005IEEE Trans Dev Mater Reliab2005,5,:1
20Visceral obesity and plasma glucose-insulin homeostasis: contributions of interleukin-6 and tumor necrosis factor-alpha in men显示文摘Cartier A Lemieux I Aim e ras N 2008Clin Endocrinol Metal)2008,93,5:1
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