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		题名	作者	年代	出处	被引量
	1	Development and Characterization of Sol-gel Derived Al Doped ZnO/p-Si Photodiode显示文摘The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped (0.8 wt pct) photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.	Babita Gupta Anubha Jain R.M.Mehra	2010	Journal of Materials Science & Technology2010，26，3：	2
	2	Variable Step-SizeLMS Algorithm for Fractal Signals 显示文摘	Anubha Gupta ShivDutt Joshi	2008	Ieee Transactionson Signal Processing2008，56，4：	1
	3	A new method of estimating wavelet with desired features from a given signal 显示文摘	ANUBHA GUPTA SHIV DUTT JOSHI SURENDRA PRASAD	2005	Signal Processing2005，85，：	1

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