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| 1 | Preparation and optical characterization of transparent,microporous TiO2 xerogel monoliths显示文摘 | El Mir L Amlouk A Elaloui E | 2008 | Mater Sci Engn B2008，146，： | 1 |
| 2 | Comparative effects of indium/ytterbium doping on,mechanical and gas-sensitivity- related morphological,properties of sprayed ZnO compounds 显示文摘 | BOUKHACHEM A FRIDJINE S AMLOUK A | 2010 | J Alloys Compd2010，501，33： | 1 |
| 3 | Elaboration and characterization of TiO2 nanoparticles incorporated in SiO2 host matrix显示文摘 | Amlouk A L EI Mir S Kraiem S Alaya | 2006 | Journal of Physics and Chemistry of Solids2006，，： | 1 |
| 4 | Elaboration and characteriza- tion of TiO2 nanoparticles incorporated in SiO2 host matrix 显示文摘 | Amlouk A E1 Mir L Kraiem S | 2006 | Journal of Physics and Chemistry of Solids2006，67，7： | 1 |
| 5 | Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix显示文摘 | El Mir L Amlouk A Barthou C | 2006 | Journal of Physics and Chemistry of Solids2006，67，11： | 1 |
| 6 | 显示文摘 | Mir L E Amlouk A Barthou C | 2006 | J Phys Chem Solid2006，67，： | 1 |
| 7 | Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method显示文摘This work investigated the influence of silver plasmon and reduced graphene oxide(r GO)on the photoelectrochemical performance(PEC)of Zn O thin films synthesized by the sol-gel method.The physicochemical properties of the obtained photo-anodes were systematically studied by using several characterization techniques.The x-ray diffraction analysis showed that all samples presented hexagonal wurtzite structure with a polycrystalline nature.Raman and energy dispersive x-ray(EDX)studies confirmed the existence of both Ag and r GO in Zn O:Ag/r GO thin films.The estimated grain size obtained from scanning electron microscopy(SEM)analysis decreased with Ag doping,then increased to a maximum value after r GO addition.The UV-vis transmission spectra of the as-prepared Zn O:Ag and Zn O:Ag/r GO thin films have shown a reduction in the visible range with a redshift at the absorption edges.The bandgaps were estimated to be around 3.17 e V,2.7 e V,and 2.52 e V for Zn O,Zn O:Ag,and Zn O:Ag/r GO,respectively.Moreover,the electrical measurements revealed that the charge exchange processes were enhanced at the Zn O:Ag/r GO/electrolyte interface,accompanied by an increase in the(PEC)performance compared to Zn O and Zn O:Ag photo-anodes.Consequently,the photocurrent density of Zn O:Ag/r GO(0.2 m A·cm^(-2)) was around 4 and 2.22 times higher than photo-anodes based on undoped Zn O(0.05 m A·cm^(-2)) and Zn O:Ag(0.09 m A·cm^(-2)),respectively.Finally,from the flat band potential and donor density,deduced from the Mott-Schottky,it was clear that all the samples were n-type semiconductors with the highest carrier density for the Zn O:Ag/r GO photo-anode. | D Ben Jemia M Karyaoui M A Wederni A Bardaoui M V Martinez-Huerta M Amlouk R Chtourou | 2022 | Chinese Physics B2022，31，5： | 0 |
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