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7篇 您的检索式：作者名="ALQUIER L"

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		题名	作者	年代	出处	被引量
	1	Determination of relative response factors of impurities in paclitaxel with high performance liquid chromatography equipped with ultraviolet and charged aero- sol detectors 显示文摘	SUN P WANG XD ALQUIER L	2008	J Chromatogr A2008，1177，1：	1
	2	The effect of the boron doping level on the thermal behaviour of end-of-range defects in silicon显示文摘	Bonafos C Claverie A Alquier D Bergaud C Martinez A La(a)nab L Mathiot D		0，，03：	1
	3	Determination of relative response factors of impurities in paclitaxel with high performance liquid chromatography equipped with ultraviolet and charged aerosol detectors 显示文摘	Sun P Wang XD Alquier L	2008	J Chromatogr A2008，1177，：	1
	4	Determination of relative response factors of impurities in paclitaxel with high performance liquid chromatography equipped with ultraviolet and charged aerosol detectors显示文摘	Sun P Wang X Alquier L	2008	J Chromatogr A2008，1177，1：	1
	5	Investigation of rrrass-balance issue in e-beam sterilized paclitaxel eluting coronary stents by SPME/GC- MS显示文摘	VAS G ALQUIER L CYNTHIA A	2008	Journal of Pharmaceutical and Biomedical Analysis2008，48，：	1
	6	Deletion of GPR40 impairs glucose-induced insulin secretion in vivo in mice without affecting intracellular fuel metabolism in islets显示文摘	ALQUIER T PEYOT M L MARTIN G	2009	Diabetes2009，58，11：	1
	7	Effects of A Top SiO2 Surface Layer on Cavity Formation and Helium Desorption in Silicon显示文摘Cz n-type Si (100) samples with and without a top SiO2 layer were implanted with 40 keV helium ions at the same dose of 5×1016 cm-2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (THDS) were used to study the thermal evolution of cavities upon and helium thermal release, respectively. XTEM results show that the presence of the top SiO2 layer could suppress the thermal growth of cavities mainly formed in the region close to the SiO2/Si interface, which leads to the reduction in both the cavity band and cavity density. THDS results reveal that the top oxide layer could act as an effective barrier for the migration of helium atoms to the surface, and it thus gives rise to the formation of more overpresurrized bubbles and to the occurrence of a third release peak located at about 1100 K. The results were qualitively discussed by considering the role of the oxide surface layer in defect migration and evolution upon annealing.	Liu Changlong Yin Lijun Lü Yiying Alquier D	2006	Journal of Rare Earths2006，24，z1：	0

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