| 1 | Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering显示文摘N-doped ZnO films were radio frequency(RF)sputtered on glass substrates and studied as a function of oxygen partial pressure(OPP)ranging from 3.0×10-4 to 9.5×10-3 Pa.X-ray diffraction patters confirmed the polycrystalline nature of the deposited films.The crystalline structure is influenced by the variation of OPP.Atomic force microscopy analysis confirmed the agglomeration of the neighboring spherical grains with a sharp increase of root mean square(RMS)roughness when the OPP is increased above 1.4×10-3 Pa.X-ray photoelectron spectroscopy analysis revealed that the incorporation of N content into the film is decreased with the increase of OPP,noticeably N 1s XPS peaks are hardly identified at 9.5×10-3 Pa.The average visible transmittance(380-700 nm) is increased with the increase of OPP(from~17%to 70%),and the optical absorption edge shifts towards the shorter wavelength.The films deposited with low OPP(≤3.0×10-4 Pa)show n-type conductivity and those deposited with high OPP(≥9.0×10-4 Pa)are highly resistive(>105Ω·cm) | 王金忠 E.ElANGOVAN N.FRANCO A.ALVESE A.REGO R.MARTINS E.FORTUNATO | 2010 | Transactions of Nonferrous Metals Society of China2010，20，12： | 5 |
| 2 | 不同衬底温度下射频磁控溅射磷掺杂ZnO薄膜的性质显示文摘为研究在低温衬底上沉积磷掺杂ZnO薄膜的性质,从室温到350°C的范围内磷掺杂的ZnO被磁控溅射到蓝宝石衬底上。样品的XRD谱显示薄膜为<001>方向择优生长,ZnO(002)面的衍射峰在250°C时最低。原子力图像分析显示:薄膜的表面形貌随沉积温度而变化,粗糙度随温度升高而增加。样品的XPS谱在134eV附近清晰地观测到了磷的P2p峰,且组分随衬底温度而变化。在400~600nm的范围内样品的平均光学透射率大于60%,所计算的光学带隙大约为3.2 eV。薄膜的Hall测量表明薄膜为n型电导,且薄膜中的载流子浓度随温度的升高而降低。该工作有助于对ZnO低温磷掺杂薄膜性质的了解,从而在低温下获得磷掺杂的ZnO p型导电薄膜。 | 王金忠 李美成 Vincent Sallet A.Rego R.Martins E.Fortunato | 2011 | 红外与激光工程2011，40，8： | 4 |
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