维普中文期刊产品整合服务
2篇 您的检索式:作者名="A.Q.Zhang"
    题名 作者 年代 出处 被引量
1Measurements of the center-of-mass energies of e^(+)e^(-)collisions at BESIII显示文摘During the 2016-17 and 2018-19 running periods,the BESIII experiment collected 7.5 fb of e^(+)e^(-)collision data at center-of-mass energies ranging from 4.13 to 4.44 GeV.These data samples are primarily used for the study of excited charmonium and charmoniumlike states.By analyzing the di-muon process e^(+)e^(-)→(γISR=FSR)μ^(+)μ^(-),we measure the center-of-mass energies of the data samples with a precision of 0.6 MeV.Through a run-by-run study,we find that the center-of-mass energies were stable throughout most of the data-collection period.M.Ablikim M.N.Achasov P.Adlarson S.Ahmed M.Albrecht R.Aliberti A.Amoroso M.R.An Q.An X.H.Bai Y.Bai O.Bakina R.Baldini Ferroli I.Balossino Y.Ban K.Begzsuren N.Berger M.Bertani D.Bettoni F.Bianchi J.Bloms A.Bortone I.Boyko R.A.Briere H.Cai X.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang W.L.Chang G.Chelkov D.Y.Chen G.Chen H.S.Chen M.L.Chen S.J.Chen X.R.Chen Y.B.Chen Z.J.Chen W.S.Cheng G.Cibinetto F.Cossio X.F.Cui H.L.Dai X.C.Dai A.Dbeyssi R.E.de Boer D.Dedovich Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori Y.Ding C.Dong J.Dong L.Y.Dong M.Y.Dong X.Dong S.X.Du Y.L.Fan J.Fang S.S.Fang Y.Fang R.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng M.Fritsch C.D.Fu Y.Gao Y.Gao Y.Gao Y.G.Gao I.Garzia P.T.Ge C.Geng E.M.Gersabeck A Gilman K.Goetzen L.Gong W.X.Gong W.Gradl M.Greco L.M.Gu M.H.Gu Y.T.Gu C.Y Guan A.Q.Guo L.B.Guo R.P.Guo Y.P.Guo A.Guskov T.T.Han W.Y.Han X.Q.Hao F.A.Harris K.L.He F.H.Heinsius C.H.Heinz T.Held Y.K.Heng C.Herold M.Himmelreich T.Holtmann G.Y.Hou Y.R.Hou Z.L.Hou H.M.Hu J.F.Hu T.Hu Y.Hu G.S.Huang L.Q.Huang X.T.Huang Y.P.Huang Z.Huang T.Hussain N Husken W.Ikegami Andersson W.Imoehl M.Irshad S.Jaeger S.Janchiv Q.Ji Q.P.Ji X.B.Ji X.L.Ji Y.Y.Ji H.B.Jiang X.S.Jiang J.B.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing T.Johansson N.Kalantar-Nayestanaki X.S.Kang R.Kappert M.Kavatsyuk B.C.Ke I.K.Keshk A.Khoukaz P.Kiese R.Kiuchi R.Kliemt L.Koch O.B.Kolcu B.Kopf M.Kuemmel M.Kuessner A.Kupsc M.G.Kurth W.Kuhn J.J.Lane J.S.Lange P.Larin A.Lavania L.Lavezzi Z.H.Lei H.Leithoff M.Lellmann T.Lenz C.Li C.H.Li Cheng Li D.M.Li F.Li G.Li H.Li H.Li H.B.Li H.J.Li J.L.Li J.Q.Li J.S.Li Ke Li L.K.Li Lei Li P.R.Li S.Y.Li W.D.Li W.G.Li X.H.Li X.L.Li Xiaoyu Li Z.Y.Li H.Liang H.Liang H.Liang Y.F.Liang Y.T.Liang G.R.Liao 廖龙洲 J.Libby C.X.Lin B.J.Liu C.X.Liu D.Liu F.H.Liu Fang Liu Feng Liu H.B.Liu H.M.Liu Huanhuan Liu Huihui Liu J.B.Liu J.L.Liu J.Y.Liu K.Liu K.Y.Liu L.Liu M.H.Liu P.L.Liu Q.Liu Q.Liu S.B.Liu Shuai Liu T.Liu W.M.Liu X.Liu Y.Liu Y.B.Liu Z.A.Liu Z.Q.Liu X.C.Lou F.X.Lu H.J.Lu J.D.Lu J.G.Lu X.L.Lu Y.Lu Y.P.Lu C.L.Luo M.X.Luo P.W.Luo T.Luo X.L.Luo X.R.Lyu F.C.Ma H.L.Ma L.L.Ma M.M.Ma Q.M.Ma R.Q.Ma R.T.Ma X.X.Ma X.Y.Ma F.E.Maas M.Maggiora S.Maldaner S.Malde Q.A.Malik A.Mangoni Y.J.Mao Z.P.Mao S.Marcello Z.X.Meng J.G.Messchendorp G.Mezzadri T.J.Min R.E.Mitchell X.H.Mo N.Yu.Muchnoi H.Muramatsu S.Nakhoul Y.Nefedov F.Nerling I.B.Nikolaev Z.Ning S.Nisar S.L.Olsen Q.Ouyang S.Pacetti X.Pan Y.Pan A.Pathak A.Pathak P.Patteri M.Pelizaeus H.P.Peng K.Peters J.Pettersson J.L.Ping R.G.Ping S.Pogodin R.Poling V.Prasad H.Qi H.R.Qi K.H.Qi M.Qi T.Y.Qi S.Qian W.B.Qian Z.Qian C.F.Qiao L.Q.Qin X.P.Qin X.S.Qin Z.H.Qin J.F.Qiu S.Q.Qu K.H.Rashid K.Ravindran C.F.Redmer A.Rivetti V.Rodin M.Rolo G.Rong Ch.Rosner M.Rump H.S.Sang A.Sarantsev Y.Schelhaas C.Schnier K.Schoenning M.Scodeggio D.C.Shan W.Shan X.Y.Shan J.F.Shangguan M.Shao C.P.Shen H.F.Shen P.X.Shen X.Y.Shen H.C.Shi R.S.Shi X.Shi X.D Shi J.J.Song W.M.Song Y.X.Song S.Sosio S.Spataro K.X.Su P.P.Su F.F.Sui G.X.Sun H.K.Sun J.F.Sun L.Sun S.S.Sun T.Sun W.Y.Sun W.Y.Sun X Sun Y.J.Sun Y.K.Sun Y.Z.Sun Z.T.Sun Y.H.Tan Y.X.Tan C.J.Tang G.Y.Tang J.Tang J.X.Teng V.Thoren W.H.Tian Y.T.Tian I.Uman B.Wang C.W.Wang D.Y.Wang H.J.Wang H.P.Wang K.Wang L.L.Wang M.Wang M.Z.Wang Meng Wang W.Wang W.H.Wang W.P.Wang X.Wang X.F.Wang X.L.Wang Y.Wang Y.Wang Y.D.Wang Y.F.Wang Y.Q.Wang Y.Y.Wang Z.Wang Z.Y.Wang Ziyi Wang Zongyuan Wang D.H.Wei F.Weidner S.P.Wen D.J.White U.Wiedner G.Wilkinson M.Wolke L.Wollenberg J.F.Wu L.H.Wu L.J.Wu X.Wu Z.Wu L.Xia H.Xiao S.Y.Xiao Z.J.Xiao X.H.Xie Y.G.Xie Y.H.Xie T.Y.Xing G.F.Xu Q.J.Xu W.Xu X.P.Xu Y.C.Xu F.Yan L.Yan W.B.Yan W.C.Yan Xu Yan H.J.Yang H.X.Yang L.Yang S.L.Yang Y.X.Yang Yifan Yang Zhi Yang M.Ye M.H.Ye J.H.Yin Z.Y.You B.X.Yu C.X.Yu G.Yu J.S.Yu T.Yu 苑长征 L.Yuan X.Q.Yuan Y.Yuan Z.Y.Yuan C.X.Yue A.A.Zafar X.Zeng Zeng Y.Zeng A.Q.Zhang B.X.Zhang Guangyi Zhang H.Zhang H.H.Zhang H.H.Zhang H.Y.Zhang J.J.Zhang J.L.Zhang J.Q.Zhang J.W.Zhang J.Y.Zhang J.Z.Zhang Jianyu Zhang Jiawei Zhang L.M.Zhang L.Q.Zhang Lei Zhang S.Zhang S.F.Zhang Shulei Zhang X.D.Zhang X.Y.Zhang Y.Zhang Y.T.Zhang Y.H.Zhang Yan Zhang Yao Zhang Z.Y.Zhang G.Zhao J.Zhao J.Y.Zhao J.Z.Zhao Lei Zhao Ling Zhao M.G.Zhao Q.Zhao S.J.Zhao Y.B.Zhao Y.X.Zhao Z.G.Zhao A.Zhemchugov B.Zheng J.P.Zheng Y.H.Zheng B.Zhong C.Zhong L.P.Zhou Q.Zhou X.Zhou X.K.Zhou X.R.Zhou X.Y.Zhou A.N.Zhu J.Zhu K.Zhu K.J.Zhu S.H.Zhu T.J.Zhu W.J.Zhu W.J.Zhu Y.C.Zhu Z.A.Zhu B.S.Zou J.H.Zou 2021Chinese Physics C2021,45,10:0
2Structure and topological transport in Pb-doping topological crystalline insulator SnTe(001)film显示文摘Topological crystalline insulator(TCI)as a new type of topological materials has attracted extensive research interests for its tunable topological properties.Due its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport properties.On SrTiO3(111)substrate,the SnTe film was found to be epitaxial growth only along[001]while not[111]direction.The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe(001)film.The transport properties of SnTe(001)film were further investigated and a typical weak anti-localization effect was observed.By Pb-doping into SnTe,the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution.With tunable multiple transport channels from the even Dirac cones,the TCI SnTe film systems will have the potential application in future spintronics devices.C.H.Yan F.Wei Y.Bai F.Wang A.Q.Zhang S.Ma W.Liu Z.D.Zhang 2020Journal of Materials Science & Technology2020,44,9:0
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费