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	题名	作者	年代	出处	被引量
1	Degradation of tunnel-oxide floating-gate ceprom devices and the correlation with high field-currentinduced degradation of thin gate oxides 显示文摘	Witters J S	1989	IEEE Trans ED1989，36，9：	3
2	A new techniques for measuring coupling coefficients and 3-D capacitance characterization of floating gate devices 显示文摘	Choi W L Kim D M	1994	IEEE Trans ED1994，41，12：	3
3	Optimum design of triodelikeJEET' s by two-dimensional computer simulation 显示文摘	YAMAGUCHI K KODERA H	1977	IEEE Trans on ED1977，24，8：	1
4	On the calculation of doping profile from C(V) measurement on two-sided junctions 显示文摘	MAN H J J D	1970	IEEE Trans on ED1970，17，12：	1
5	A batch-fabricated silicon accelerometer显示文摘		1979	IEEE Trans Electron Devices ED1979，26，12：	1
6	An analysis of small-signal gate-drain resistance effect on RF power MOSFETs 显示文摘	LIN Y S LU S S	2003	IEEE Trans on ED2003，50，2：	1
7	Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals 显示文摘	MAEZAWA K AKEYOSHI T MIZUTANI T	1994	IEEE Trans on ED1994，41，2：	1
8	An accurateDC model for high-voltage lateral DMOS transistors suited for CAD显示文摘	Cleasen H R Zee Piet Ven Der	1986	IEEE Trans ED1986，33，12：	1
9	High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity 显示文摘	IWAI T OHARA S YAMADA H S	1998	IEEE Trans on ED1998，45，6：	1
10	Physical DMOST modeling for highvoltage IC CAD显示文摘	Kim Y S fossum J G	1990	IEEE Trans ED1990，37，3：	1
11	Uhrathin Al2O3 and HfO2 gate dielectrics on surfaee-nitrided Ge 显示文摘	CHEN J J BOJARCZUK N A SHANG H	2004	IEEE Trans on ED2004，51，9：	1
12	A CAD-oriented nonlinear model of SiC MESFET based on pulsed Ⅰ(Ⅴ) pulsed,S-parameters measurements显示文摘	Oliver Noblanc Denis	1999	IEEE Trans ED1999，46，3：	1
13	A physics-based MOSFET noise model for circuit simulators 显示文摘	HUNG K K KO P K HU C	1990	IEEE Trans on ED1990，37，5：	1
14	Thermochemical reaction of ZrOx (Ny) interfaces on Ge and Si substrate 显示文摘	CHENG C C CHIEN C H LIN J H	2006	IEEE Trans on ED2006，89，01：	1
15	Detection and optimization of temperature distribution across largearea power MOSFETs to Improve Energy Capability显示文摘	Vishnu Khemka Vijay P Zhu Ronghua	2004	IEEE Trans ED2004，51，6：	1
16	Review and critique of analytic models of MOSFET short-channel effects in subthreshold显示文摘	Xie Q Xu Jnm Yuan Taur	2012	IEEE Trans ED2012，59，6：	1
17	An Evaluation of Heat Dissipation Capability of Slow-Wave Structures显示文摘	Han Yong Liu Yanwen Ding Yaogen	2007	IEEE Trans on ED2007，54，：	1
18	A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel deplation layer due to source and drain junction显示文摘	S Baishya A Allik C K Sarkar	2006	IEEE Trans ED2006，53，3：	1
19	Profile design considerations for minimizing base transit time in SiGe HBT's 显示文摘	Patri V S Kumar M J	1998	IEEE Trans ED1998，45，8：	1
20	Analytical Approximation for the Surface Potential in n-Channel MOSFETs Considering Potential in n-Channel MOSFETs Considering显示文摘	G S Jayadeva Amitava DasGupta	2010	IEEE Trans ED2010，57，8：	1

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